Liaqat Adeel, Yin Yiheng, Hussain Sabir, Wen Wen, Wu Juanxia, Guo Yuzheng, Dang Chunhe, Ho Ching-Hwa, Liu Zheng, Yu Peng, Cheng Zhihai, Xie Liming
CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
Nanotechnology. 2021 Dec 24;33(12). doi: 10.1088/1361-6528/ac4063.
As scaling down the size of metal oxide semiconductor field-effect transistors (FETs), power dissipation has become a major challenge. Lowering down the sub-threshold swing (SS) is known as an effective technique to decrease the operating voltage of FETs and hence lower down the power consumption. However, the Boltzmann distribution of electrons (so-called 'Boltzmann tyranny') implements a physical limit to the SS value. Use of negative capacitance (NC) effect has enabled a new path to achieve a low SS below the Boltzmann limit (60 mV decat room temperature). In this work, we have demonstrated a NC-FET from an all two-dimensional (2D) metal ferroelectric semiconductor (MFS) vertical heterostructure: Graphene/CuInPS/MoS. The negative capacitance from the ferroelectric CuInPShas enabled the breaking of the 'Boltzmann tyranny'. The heterostructure based device has shown steep slopes switching below 60 mV dec(lowest to < 10 mV dec) over 3 orders of source-drain current, which provides an avenue for all 2D material based steep slope FETs.
随着金属氧化物半导体场效应晶体管（FET）尺寸的缩小，功耗已成为一个主要挑战。降低亚阈值摆幅（SS）是降低FET工作电压从而降低功耗的有效技术。然而，电子的玻尔兹曼分布（所谓的“玻尔兹曼暴政”）对SS值施加了物理限制。利用负电容（NC）效应开辟了一条新途径，可实现低于玻尔兹曼极限（室温下60 mV/dec）的低SS。在这项工作中，我们展示了一种基于全二维（2D）金属铁电半导体（MFS）垂直异质结构的NC-FET：石墨烯/CuInPS/MoS₂。铁电CuInPS的负电容打破了“玻尔兹曼暴政”。基于该异质结构的器件在源漏电流的3个数量级上显示出低于60 mV/dec的陡峭斜率切换（最低至<10 mV/dec），这为全二维材料基陡峭斜率FET提供了一条途径。
