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结合电化学和定量元素分析研究氧化铈薄膜燃料电极的硫中毒过程。

Combining electrochemical and quantitative elemental analysis to investigate the sulfur poisoning process of ceria thin film fuel electrodes.

作者信息

Herzig C, Frank J, Nenning A, Gerstl M, Bumberger A, Fleig J, Opitz A K, Limbeck A

机构信息

TU Wien, Institute of Chemical Technologies and Analytics Getreidemarkt 9/164 I2AC 1060 Vienna Austria

TU Wien, Joint Workshop, Technical Chemistry Vienna Austria.

出版信息

J Mater Chem A Mater. 2021 Dec 22;10(4):1840-1851. doi: 10.1039/d1ta06873c. eCollection 2022 Jan 25.

DOI:10.1039/d1ta06873c
PMID:35178245
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8788136/
Abstract

This work deals with the effect of sulfur incorporation into model-type GDC thin films on their in-plane ionic conductivity. By means of impedance measurements, a strongly deteriorating effect on the grain boundary conductivity was confirmed, which additionally depends on the applied electrochemical polarisation. To quantify the total amount of sulfur incorporated into GDC thin films, online-laser ablation of solids in liquid (online-LASIL) was used as a novel solid sampling strategy. Online-LASIL combines several advantages of conventional sample introduction systems and enables the detection of S as a minor component in a very limited sample system (in the present case 35 μg total sample mass). To reach the requested sensitivity for S detection using an inductively coupled plasma-mass spectrometer (ICP-MS), the reaction cell of the quadrupole instrument was used and the parameters for the mass shift reaction with O were optimised. The combination of electrical and quantitative analytical results allows the identification of a potential sulfur incorporation pathway, which very likely proceeds along GDC grain boundaries with oxysulfide formation as the main driver of ion transport degradation. Depending on the applied cathodic bias, the measured amount of sulfur would be equivalent to 1-4 lattice constants of GDC transformed into an oxysulfide phase at the material's grain boundaries.

摘要

这项工作研究了在模型类型的GDC薄膜中掺入硫对其面内离子电导率的影响。通过阻抗测量,证实了硫对晶界电导率有强烈的恶化作用,且这种作用还取决于所施加的电化学极化。为了量化掺入GDC薄膜中的硫的总量,采用了液体中固体在线激光烧蚀(online-LASIL)作为一种新型的固体采样策略。Online-LASIL结合了传统样品引入系统的多个优点,并能够在非常有限的样品系统中检测作为次要成分的硫(在本案例中,样品总质量为35μg)。为了使用电感耦合等离子体质谱仪(ICP-MS)达到所需的硫检测灵敏度,使用了四极杆仪器的反应池,并优化了与氧进行质量转移反应的参数。电学和定量分析结果的结合使得能够确定一种潜在的硫掺入途径,该途径很可能沿着GDC晶界进行,形成氧硫化物是离子传输降解的主要驱动因素。根据所施加的阴极偏压,所测得的硫含量相当于在材料晶界处转变为氧硫化物相的1 - 4个GDC晶格常数。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efa0/8788136/4bdd81d2e629/d1ta06873c-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efa0/8788136/f7a0004d9a54/d1ta06873c-f1.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efa0/8788136/ec39f9a20173/d1ta06873c-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efa0/8788136/8f86e5bb47bc/d1ta06873c-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efa0/8788136/4bdd81d2e629/d1ta06873c-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efa0/8788136/f7a0004d9a54/d1ta06873c-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efa0/8788136/f90447eadf5b/d1ta06873c-f2.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efa0/8788136/d6a1e2c2ad3e/d1ta06873c-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efa0/8788136/ec39f9a20173/d1ta06873c-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efa0/8788136/8f86e5bb47bc/d1ta06873c-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efa0/8788136/4bdd81d2e629/d1ta06873c-f8.jpg

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