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硫属化物光电导忆阻器用于多因素神经形态计算。

Chalcogenide optomemristors for multi-factor neuromorphic computation.

机构信息

IBM Research- Europe, Säumerstrasse, 8803, Rüschlikon, Switzerland.

Department of Materials, University of Oxford, Oxford, OX1 3PH, Oxford, UK.

出版信息

Nat Commun. 2022 Apr 26;13(1):2247. doi: 10.1038/s41467-022-29870-9.

DOI:10.1038/s41467-022-29870-9
PMID:35474061
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9042832/
Abstract

Neuromorphic hardware that emulates biological computations is a key driver of progress in AI. For example, memristive technologies, including chalcogenide-based in-memory computing concepts, have been employed to dramatically accelerate and increase the efficiency of basic neural operations. However, powerful mechanisms such as reinforcement learning and dendritic computation require more advanced device operations involving multiple interacting signals. Here we show that nano-scaled films of chalcogenide semiconductors can perform such multi-factor in-memory computation where their tunable electronic and optical properties are jointly exploited. We demonstrate that ultrathin photoactive cavities of Ge-doped Selenide can emulate synapses with three-factor neo-Hebbian plasticity and dendrites with shunting inhibition. We apply these properties to solve a maze game through on-device reinforcement learning, as well as to provide a single-neuron solution to linearly inseparable XOR implementation.

摘要

神经形态硬件模拟生物计算是人工智能发展的关键驱动力。例如,忆阻技术,包括基于硫属化物的内存计算概念,已被用于显著加速和提高基本神经操作的效率。然而,诸如强化学习和树突计算等强大机制需要更先进的设备操作,涉及多个相互作用的信号。在这里,我们展示了纳米级的硫属半导体薄膜可以执行这种多因素的内存计算,其中联合利用了其可调谐的电子和光学性质。我们证明了掺锗硒化物的超薄光活性腔可以模拟具有三因素新赫比可塑性的突触和具有分流抑制的树突。我们将这些特性应用于通过设备内强化学习来解决迷宫游戏,以及提供单个神经元解决方案来实现线性不可分的异或实现。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63f3/9042832/28a4fd41fb83/41467_2022_29870_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63f3/9042832/bbfaa13d7833/41467_2022_29870_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63f3/9042832/56a5a75d68e2/41467_2022_29870_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63f3/9042832/9f3e8ab6bb13/41467_2022_29870_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63f3/9042832/28a4fd41fb83/41467_2022_29870_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63f3/9042832/bbfaa13d7833/41467_2022_29870_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63f3/9042832/56a5a75d68e2/41467_2022_29870_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63f3/9042832/9f3e8ab6bb13/41467_2022_29870_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63f3/9042832/28a4fd41fb83/41467_2022_29870_Fig4_HTML.jpg

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Nat Nanotechnol. 2022 May;17(5):507-513. doi: 10.1038/s41565-022-01095-3. Epub 2022 Mar 28.
2
Mastering Atari, Go, chess and shogi by planning with a learned model.通过使用学习模型进行规划,掌握 Atari、围棋、国际象棋和将棋。
Nature. 2020 Dec;588(7839):604-609. doi: 10.1038/s41586-020-03051-4. Epub 2020 Dec 23.
3
Memory devices and applications for in-memory computing.用于内存计算的存储设备和应用。
Chem Rev. 2025 Jan 22;125(2):745-785. doi: 10.1021/acs.chemrev.4c00587. Epub 2024 Dec 27.
4
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Nano Lett. 2024 Dec 25;24(51):16325-16332. doi: 10.1021/acs.nanolett.4c04567. Epub 2024 Dec 10.
5
Cellular mechanisms of cooperative context-sensitive predictive inference.协同上下文敏感预测推理的细胞机制
Curr Res Neurobiol. 2024 Apr 15;6:100129. doi: 10.1016/j.crneur.2024.100129. eCollection 2024.
6
Memory-electroluminescence for multiple action-potentials combination in bio-inspired afferent nerves.用于生物启发式传入神经中多个动作电位组合的记忆电致发光
Nat Commun. 2024 Apr 25;15(1):3505. doi: 10.1038/s41467-024-47641-6.
Nat Nanotechnol. 2020 Jul;15(7):529-544. doi: 10.1038/s41565-020-0655-z. Epub 2020 Mar 30.
4
Fully hardware-implemented memristor convolutional neural network.全硬件实现的忆阻器卷积神经网络。
Nature. 2020 Jan;577(7792):641-646. doi: 10.1038/s41586-020-1942-4. Epub 2020 Jan 29.
5
Dendritic action potentials and computation in human layer 2/3 cortical neurons.人类皮层 2/3 层神经元的树突动作电位和计算。
Science. 2020 Jan 3;367(6473):83-87. doi: 10.1126/science.aax6239.
6
Memristive crossbar arrays for brain-inspired computing.忆阻器交叉阵列用于脑启发计算。
Nat Mater. 2019 Apr;18(4):309-323. doi: 10.1038/s41563-019-0291-x. Epub 2019 Mar 20.
7
Symmetry-Controlled Reversible Photovoltaic Current Flow in Ultrathin All 2D Vertically Stacked Graphene/MoS/WS/Graphene Devices.超薄全二维垂直堆叠石墨烯/MoS/WS/石墨烯器件中对称控制的可逆光伏电流流动
ACS Appl Mater Interfaces. 2019 Jan 16;11(2):2234-2242. doi: 10.1021/acsami.8b16790. Epub 2019 Jan 3.
8
Engineering Interface-Dependent Photoconductivity in GeSbTe Nanoscale Devices.在 GeSbTe 纳米器件中实现与界面相关的光电导。
ACS Appl Mater Interfaces. 2018 Dec 26;10(51):44906-44914. doi: 10.1021/acsami.8b17602. Epub 2018 Dec 12.
9
Eligibility Traces and Plasticity on Behavioral Time Scales: Experimental Support of NeoHebbian Three-Factor Learning Rules.行为时间尺度上的资格痕迹和可塑性:新海比尔三因素学习规则的实验支持。
Front Neural Circuits. 2018 Jul 31;12:53. doi: 10.3389/fncir.2018.00053. eCollection 2018.
10
Towards deep learning with segregated dendrites.走向具有分离树突的深度学习。
Elife. 2017 Dec 5;6:e22901. doi: 10.7554/eLife.22901.