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气溶胶辅助化学气相沉积法制备ZnO的沉积参数及生长动力学研究

Study of deposition parameters and growth kinetics of ZnO deposited by aerosol assisted chemical vapor deposition.

作者信息

Sánchez-Martín Sergio, Olaizola S M, Castaño E, Urionabarrenetxea E, Mandayo G G, Ayerdi I

机构信息

CEIT-Basque Research and Technology Alliance (BRTA) Manuel Lardizabal 15 20018 Donostia/San Sebastián Spain

Universidad de Navarra, Tecnun Manuel Lardizabal 13 20018 Donostia/San Sebastián Spain.

出版信息

RSC Adv. 2021 May 21;11(30):18493-18499. doi: 10.1039/d1ra03251h. eCollection 2021 May 19.

DOI:10.1039/d1ra03251h
PMID:35480902
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9033435/
Abstract

Aerosol-assisted Chemical Vapor Deposition (AACVD) is a thermally activated CVD technique that uses micro-droplets as deposition precursors. An AACVD system with a custom-designed reaction chamber has been implemented to grow ZnO thin films using zinc chloride as a precursor. The present work aims to study the impact of the deposition parameters on the thin film, as well as the microstructure evolution and growth kinetics. Aerosol flow has an effect on the density of nucleation sites and on the grain size. The temperature affects the morphology of the grown ZnO, showing a preferential orientation along the -axis for 350 °C, 375 °C and 400 °C substrate temperatures. The microstructural evolution and the growth kinetics are also presented. A different evolution behavior has been observed for 350 °C, where nucleation site density is the highest at the early stages and it decreases over time in contrast with the cases of 375 °C and 400 °C, where there is an initial increase and a subsequent decrease. The activation energy of the chemical reaction is 1.06 eV. The optical characterization of the material has been performed through reflection measurements showing a relationship between the spectrum and the ZnO film thickness. The electrical characterization has been done by means of an interdigital capacitor, with which it is possible to measure the grain and grain boundary resistance of the material. Both resistances are of the order of 10-10 Ω.

摘要

气溶胶辅助化学气相沉积(AACVD)是一种热激活的化学气相沉积技术,它使用微滴作为沉积前驱体。已搭建了一个带有定制设计反应室的AACVD系统,以氯化锌为前驱体来生长氧化锌薄膜。目前的工作旨在研究沉积参数对薄膜的影响,以及微观结构演变和生长动力学。气溶胶流对成核位点密度和晶粒尺寸有影响。温度影响生长的氧化锌的形貌,在350℃、375℃和400℃的衬底温度下,氧化锌呈现出沿c轴的择优取向。还介绍了微观结构演变和生长动力学。在350℃观察到了不同的演变行为,在早期成核位点密度最高,随后随时间降低,而在375℃和400℃的情况下,成核位点密度最初增加,随后降低。化学反应的活化能为1.06电子伏特。通过反射测量对材料进行了光学表征,结果表明光谱与氧化锌薄膜厚度之间存在关联。通过叉指电容器进行了电学表征,利用该电容器可以测量材料的晶粒电阻和晶界电阻。两者的电阻均为10 - 10Ω量级。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c4a8/9033435/c2c703675c9c/d1ra03251h-f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c4a8/9033435/dceb783b7af7/d1ra03251h-f1.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c4a8/9033435/f294c05ddde5/d1ra03251h-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c4a8/9033435/3cb5e673f0c5/d1ra03251h-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c4a8/9033435/023baadcb3a0/d1ra03251h-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c4a8/9033435/c2c703675c9c/d1ra03251h-f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c4a8/9033435/dceb783b7af7/d1ra03251h-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c4a8/9033435/2b0d0c7b5d17/d1ra03251h-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c4a8/9033435/6bb9433080e5/d1ra03251h-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c4a8/9033435/b2ca782a8fb6/d1ra03251h-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c4a8/9033435/adb7e040dc2c/d1ra03251h-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c4a8/9033435/f294c05ddde5/d1ra03251h-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c4a8/9033435/3cb5e673f0c5/d1ra03251h-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c4a8/9033435/023baadcb3a0/d1ra03251h-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c4a8/9033435/c2c703675c9c/d1ra03251h-f9.jpg

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