Optical and electrical properties of all-inorganic CsAgBiBr double perovskite single crystals.

In this work, we explored the possibility of using CsAgBiBr, a double perovskite crystal, for radiation detection. CsAgBiBr crystals were grown using the solution growth technique. The resistivity of the as-grown CsAgBiBr crystal is larger than 10 Ω cm, which is high enough to ensure low leakage current for fabrication of semiconductor radiation detectors. Using the temperature-dependent resistivity measurements, we estimated that the Fermi level is at 0.788 eV above the valence band and the material is a p-type semiconductor. From the low-temperature cathodoluminescence measurements, two near band gap energies at 1.917 eV and 2.054 eV were revealed.