Department of Chemical System Engineering, School of Engineering, The University of Tokyo 7-3-1, Tokyo 113-8656, Japan.
Molecular Sciences Institute, School of Chemistry, University of the Witwatersrand, Johannesburg 2050, South Africa.
Molecules. 2022 May 25;27(11):3421. doi: 10.3390/molecules27113421.
In chemical systems, the arsenic-centered pnictogen bond, or simply the arsenic bond, occurs when there is evidence of a net attractive interaction between the electrophilic region associated with a covalently or coordinately bound arsenic atom in a molecular entity and a nucleophile in another or the same molecular entity. It is the third member of the family of pnictogen bonds formed by the third atom of the pnictogen family, Group 15 of the periodic table, and is an inter- or intramolecular noncovalent interaction. In this overview, we present several illustrative crystal structures deposited into the Cambridge Structure Database (CSD) and the Inorganic Chemistry Structural Database (ICSD) during the last and current centuries to demonstrate that the arsenic atom in molecular entities has a significant ability to act as an electrophilic agent to make an attractive engagement with nucleophiles when in close vicinity, thereby forming σ-hole or π-hole interactions, and hence driving (in part, at least) the overall stability of the system's crystalline phase. This overview does not include results from theoretical simulations reported by others as none of them address the signatory details of As-centered pnictogen bonds. Rather, we aimed at highlighting the interaction modes of arsenic-centered σ- and π-holes in the rationale design of crystal lattices to demonstrate that such interactions are abundant in crystalline materials, but care has to be taken to identify them as is usually done with the much more widely known noncovalent interactions in chemical systems, halogen bonding and hydrogen bonding. We also demonstrate that As-centered pnictogen bonds are usually accompanied by other primary and secondary interactions, which reinforce their occurrence and strength in most of the crystal structures illustrated. A statistical analysis of structures deposited into the CSD was performed for each interaction type As···D (D = N, O, S, Se, Te, F, Cl, Br, I, arene's π system), thus providing insight into the typical nature of As···D interaction distances and ∠R-As···D bond angles of these interactions in crystals, where R is the remainder of the molecular entity.
在化学系统中,砷中心的磷族键,或简称砷键,当分子实体中与共价或配位键合的砷原子相关的亲电区域与另一个或同一分子实体中的亲核体之间存在净吸引相互作用的证据时发生。它是磷族键家族的第三个成员,由周期表第 15 族的第三原子形成,是一种分子间或分子内非共价相互作用。在这篇综述中,我们展示了几个有代表性的晶体结构,这些结构是在过去和现在的几个世纪中存入剑桥结构数据库(CSD)和无机化学结构数据库(ICSD)的,以证明分子实体中的砷原子具有作为亲电试剂的显著能力,当在近距离时与亲核体形成吸引人的结合,从而形成σ-空穴或π-空穴相互作用,从而驱动(至少部分地)系统晶体相的整体稳定性。这篇综述不包括其他人报告的理论模拟结果,因为它们都没有涉及砷中心磷族键的签名细节。相反,我们旨在强调砷中心σ-和π-空穴在晶体格子设计中的相互作用模式,以证明这种相互作用在晶体材料中很丰富,但必须小心识别它们,就像通常对化学系统中更广泛的非共价相互作用,卤键和氢键那样。我们还证明,砷中心磷族键通常伴随着其他主要和次要相互作用,这些相互作用加强了它们在大多数所说明的晶体结构中的发生和强度。对每种相互作用类型 As···D(D = N、O、S、Se、Te、F、Cl、Br、I、芳环的π系统)进行了 CSD 中结构的统计分析,从而提供了对这些相互作用在晶体中典型的 As···D 相互作用距离和 ∠R-As···D 键角的了解,其中 R 是分子实体的剩余部分。