Multi-Functional Nano/Bio Electronics Laboratory , Sungkyunkwan University , Suwon 440-746 , Republic of Korea.
ACS Appl Mater Interfaces. 2018 Jul 11;10(27):23270-23276. doi: 10.1021/acsami.8b08773. Epub 2018 Jun 28.
Multilayer MoS has been gaining interest as a new semiconducting material for flexible displays, memory devices, chemical/biosensors, and photodetectors. However, conventional multilayer MoS devices have exhibited limited performances due to the Schottky barrier and defects. Here, we demonstrate poly(diketopyrrolopyrrole-terthiophene) (PDPP3T) doping effects in multilayer MoS, which results in improved electrical characteristics (∼4.6× higher on-current compared to the baseline and a high current on/off ratio of 10). Synchrotron-based study using X-ray photoelectron spectroscopy and grazing incidence wide-angle X-ray diffraction provides mechanisms that align the edge-on crystallites (97.5%) of the PDPP3T as well as a larger interaction with MoS that leads to dipole and charge transfer effects (at annealing temperature of 300 °C), which support the observed enhancement of the electrical characteristics. Furthermore, we demonstrate a complementary metal-oxide-semiconductor inverter that uses a p-type MoSe and a PDPP3T-doped MoS as charging and discharging channels, respectively.
多层 MoS 作为一种新的半导体材料，在柔性显示器、存储器件、化学/生物传感器和光电探测器方面引起了人们的兴趣。然而，由于肖特基势垒和缺陷的存在，传统的多层 MoS 器件的性能受到限制。在这里，我们展示了聚二酮吡咯并吡咯-噻吩（PDPP3T）对多层 MoS 的掺杂效应，这导致了电特性的改善（与基线相比，电流增加了约 4.6 倍，电流开关比高达 10）。基于同步加速器的 X 射线光电子能谱和掠入射广角 X 射线衍射研究提供了机制，使 PDPP3T 的边缘晶（97.5%）排列整齐，并与 MoS 有更大的相互作用，导致偶极和电荷转移效应（在 300°C 的退火温度下），这支持了所观察到的电特性的增强。此外，我们还展示了一种互补金属氧化物半导体（CMOS）反相器，它使用 p 型 MoSe 和 PDPP3T 掺杂的 MoS 分别作为充电和放电通道。
