Chung Harry, Shin Hyungsoon, Park Jisun, Sun Wookyung
Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Republic of Korea.
Graduate Program in Smart Factory, Ewha Womans University, Seoul 03760, Republic of Korea.
Materials (Basel). 2022 Dec 25;16(1):182. doi: 10.3390/ma16010182.
Resistive random-access memory (RRAM) is essential for developing neuromorphic devices, and it is still a competitive candidate for future memory devices. In this paper, a unified model is proposed to describe the entire electrical characteristics of RRAM devices, which exhibit two different resistive switching phenomena. To enhance the performance of the model by reflecting the physical properties such as the length index of the undoped area during the switching operation, the Voltage ThrEshold Adaptive Memristor (VTEAM) model and the tungsten-based model are combined to represent two different resistive switching phenomena. The accuracy of the I-V relationship curve tails of the device is improved significantly by adjusting the ranges of unified internal state variables. Furthermore, the unified model describes a variety of electrical characteristics and yields continuous results by using the device's current-voltage relationship without dividing its fitting conditions. The unified model describes the optimized electrical characteristics that reflect the electrical behavior of the device.
电阻式随机存取存储器（RRAM）对于开发神经形态器件至关重要，并且它仍然是未来存储器件的有力候选者。本文提出了一个统一模型来描述RRAM器件的整个电学特性，该器件呈现出两种不同的电阻开关现象。为了通过反映诸如开关操作期间未掺杂区域的长度指数等物理特性来提高模型的性能，将电压阈值自适应忆阻器（VTEAM）模型和基于钨的模型相结合，以表示两种不同的电阻开关现象。通过调整统一内部状态变量的范围，显著提高了器件I-V关系曲线尾部的精度。此外，该统一模型通过使用器件的电流-电压关系来描述各种电学特性并产生连续结果，而无需划分其拟合条件。该统一模型描述了反映器件电学行为的优化电学特性。
