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利用三角碳化硅结构中的光子带隙实现高效量子纳米光子硬件。

Utilizing photonic band gap in triangular silicon carbide structures for efficient quantum nanophotonic hardware.

机构信息

Electrical and Computer Engineering Department, University of California, Davis, CA, 95616, USA.

出版信息

Sci Rep. 2023 Mar 13;13(1):4112. doi: 10.1038/s41598-023-31362-9.

DOI:10.1038/s41598-023-31362-9
PMID:36914853
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10011533/
Abstract

Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing, and sensing rely on the efficient collection of color center emission into a single optical mode. Recent hardware development in this platform has focused on angle-etching processes that preserve emitter properties and produce triangularly shaped devices. However, little is known about the light propagation in this geometry. We explore the formation of photonic band gap in structures with a triangular cross-section, which can be used as a guiding principle in developing efficient quantum nanophotonic hardware in silicon carbide. Furthermore, we propose applications in three areas: the TE-pass filter, the TM-pass filter, and the highly reflective photonic crystal mirror, which can be utilized for efficient collection and propagating mode selection of light emission.

摘要

碳化硅因其色心缺陷的长自旋相干时间和单光子发射特性,成为主要的量子信息材料平台之一。碳化硅在量子网络、计算和传感中的应用依赖于将色心辐射高效收集到单个光学模式中。该平台的最近硬件发展集中在保持发射器性能并产生三角形器件的角度蚀刻工艺上。然而,对于这种几何形状中的光传播知之甚少。我们探索了具有三角形横截面的结构中的光子带隙的形成,这可以作为在碳化硅中开发高效量子纳米光子硬件的指导原则。此外,我们提出了三个方面的应用:TE 通滤波器、TM 通滤波器和高反射光子晶体镜,它们可用于高效收集和传播光发射的模式选择。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3175/10011533/cf21fa99b729/41598_2023_31362_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3175/10011533/48c95cf3ef55/41598_2023_31362_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3175/10011533/b6a6b5a15b8c/41598_2023_31362_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3175/10011533/fcb451542269/41598_2023_31362_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3175/10011533/cd36b9c3df21/41598_2023_31362_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3175/10011533/cf21fa99b729/41598_2023_31362_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3175/10011533/48c95cf3ef55/41598_2023_31362_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3175/10011533/b6a6b5a15b8c/41598_2023_31362_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3175/10011533/fcb451542269/41598_2023_31362_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3175/10011533/cd36b9c3df21/41598_2023_31362_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3175/10011533/cf21fa99b729/41598_2023_31362_Fig5_HTML.jpg

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Vanadium spin qubits as telecom quantum emitters in silicon carbide.
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