Zhai Shuaibo, Gong Jiaqi, Feng Yifei, Que Zhongbao, Mao Weiwei, He Xuemin, Xie Yannan, Li Xing'ao, Chu Liang
School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Institute of Carbon Neutrality and New Energy, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China.
iScience. 2023 Mar 22;26(4):106461. doi: 10.1016/j.isci.2023.106461. eCollection 2023 Apr 21.
Memristors are promising information storage devices for commercial applications because of their long endurance and low power consumption. Particularly, perovskite memristors have revealed excellent resistive switching (RS) properties owing to the fast ion migration and solution fabrication process. Here, an n-i-p type double perovskite memristor with "ITO/SnO/CsAgBiBr/NiO/Ag" architecture was developed and demonstrated to reveal three resistance states because of the p-n junction electric field coupled with ion migration. The devices exhibited reliable filamentary with an on/off ratio exceeding 50. The RS characteristics remained unchanged after 1000 s read and 300 switching cycles. The synaptic functions were examined through long-term depression and potentiation measurements. Significantly, the device still worked after one year to reveal long-term stability because of the all-inorganic layers. This work indicates a novel idea for designing a multistate memristor by utilizing the p-n junction unidirectional conductivity during the forward and reverse scanning.
忆阻器因其长耐久性和低功耗而成为商业应用中很有前景的信息存储设备。特别是，钙钛矿忆阻器由于快速的离子迁移和溶液制造工艺而展现出优异的电阻开关（RS）特性。在此，开发并展示了一种具有“ITO/SnO/CsAgBiBr/NiO/Ag”结构的n-i-p型双钙钛矿忆阻器，由于p-n结电场与离子迁移相结合，该忆阻器呈现出三种电阻状态。这些器件表现出可靠的丝状结构，开/关比超过50。在1000秒的读取和300次开关循环后，RS特性保持不变。通过长期抑制和增强测量来检验突触功能。值得注意的是，由于采用了全无机层，该器件在一年后仍能工作，展现出长期稳定性。这项工作提出了一个新颖的想法，即在正向和反向扫描过程中利用p-n结的单向导电性来设计多态忆阻器。
Zotero 插件