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用于非易失性存储器件的纳米结构钙钛矿。

Nanostructured perovskites for nonvolatile memory devices.

作者信息

Liu Qi, Gao Song, Xu Lei, Yue Wenjing, Zhang Chunwei, Kan Hao, Li Yang, Shen Guozhen

机构信息

School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.

State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors & Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100083, China.

出版信息

Chem Soc Rev. 2022 May 10;51(9):3341-3379. doi: 10.1039/d1cs00886b.

Abstract

Perovskite materials have driven tremendous advances in constructing electronic devices owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties, flexible dimensionality engineering, and so on. Particularly, emerging nonvolatile memory devices (eNVMs) based on perovskites give birth to numerous traditional paradigm terminators in the fields of storage and computation. Despite significant exploration efforts being devoted to perovskite-based high-density storage and neuromorphic electronic devices, research studies on materials' dimensionality that has dominant effects on perovskite electronics' performances are paid little attention; therefore, a review from the point of view of structural morphologies of perovskites is essential for constructing perovskite-based devices. Here, recent advances of perovskite-based eNVMs (memristors and field-effect-transistors) are reviewed in terms of the dimensionality of perovskite materials and their potentialities in storage or neuromorphic computing. The corresponding material preparation methods, device structures, working mechanisms, and unique features are showcased and evaluated in detail. Furthermore, a broad spectrum of advanced technologies (, hardware-based neural networks, in-sensor computing, logic operation, physical unclonable functions, and true random number generator), which are successfully achieved for perovskite-based electronics, are investigated. It is obvious that this review will provide benchmarks for designing high-quality perovskite-based electronics for application in storage, neuromorphic computing, artificial intelligence, information security,

摘要

钙钛矿材料因其低成本、易于合成、出色的电学和光电特性、灵活的维度工程等优点,推动了电子器件制造领域的巨大进步。特别是,基于钙钛矿的新兴非易失性存储器件(eNVMs)催生了存储和计算领域众多传统范式的终结者。尽管人们在基于钙钛矿的高密度存储和神经形态电子器件方面进行了大量探索,但对材料维度对钙钛矿电子器件性能有主导作用的研究却很少受到关注;因此,从钙钛矿结构形态的角度进行综述对于构建基于钙钛矿的器件至关重要。在此,本文从钙钛矿材料的维度及其在存储或神经形态计算方面的潜力出发,综述了基于钙钛矿的eNVMs(忆阻器和场效应晶体管)的最新进展。详细展示并评估了相应的材料制备方法、器件结构、工作机制和独特特性。此外,还研究了基于钙钛矿的电子产品成功实现的一系列先进技术(如基于硬件的神经网络传感器内计算、逻辑运算、物理不可克隆功能和真随机数发生器)。显然,这篇综述将为设计用于存储、神经形态计算、人工智能、信息安全等领域的高质量基于钙钛矿的电子产品提供基准。

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