Wang Qinan, Zhao Chun, Sun Yi, Xu Rongxuan, Li Chenran, Wang Chengbo, Liu Wen, Gu Jiangmin, Shi Yingli, Yang Li, Tu Xin, Gao Hao, Wen Zhen
School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, 215123 P.R. China.
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ UK.
Microsyst Nanoeng. 2023 Jul 21;9:96. doi: 10.1038/s41378-023-00566-4. eCollection 2023.
Spiking neural networks (SNNs) have immense potential due to their utilization of synaptic plasticity and ability to take advantage of temporal correlation and low power consumption. The leaky integration and firing (LIF) model and spike-timing-dependent plasticity (STDP) are the fundamental components of SNNs. Here, a neural device is first demonstrated by zeolitic imidazolate frameworks (ZIFs) as an essential part of the synaptic transistor to simulate SNNs. Significantly, three kinds of typical functions between neurons, the memory function achieved through the hippocampus, synaptic weight regulation and membrane potential triggered by ion migration, are effectively described through short-term memory/long-term memory (STM/LTM), long-term depression/long-term potentiation (LTD/LTP) and LIF, respectively. Furthermore, the update rule of iteration weight in the backpropagation based on the time interval between presynaptic and postsynaptic pulses is extracted and fitted from the STDP. In addition, the postsynaptic currents of the channel directly connect to the very large scale integration (VLSI) implementation of the LIF mode that can convert high-frequency information into spare pulses based on the threshold of membrane potential. The leaky integrator block, firing/detector block and frequency adaptation block instantaneously release the accumulated voltage to form pulses. Finally, we recode the steady-state visual evoked potentials (SSVEPs) belonging to the electroencephalogram (EEG) with filter characteristics of LIF. SNNs deeply fused by synaptic transistors are designed to recognize the 40 different frequencies of EEG and improve accuracy to 95.1%. This work represents an advanced contribution to brain-like chips and promotes the systematization and diversification of artificial intelligence.
脉冲神经网络(SNNs)因其对突触可塑性的利用、利用时间相关性的能力以及低功耗特性而具有巨大潜力。泄漏积分发放(LIF)模型和脉冲时间依赖可塑性(STDP)是SNNs的基本组成部分。在此,首次展示了一种由沸石咪唑酯骨架(ZIFs)构成的神经器件,作为突触晶体管的关键部分来模拟SNNs。值得注意的是,神经元之间的三种典型功能,即通过海马体实现的记忆功能、突触权重调节以及由离子迁移触发的膜电位,分别通过短期记忆/长期记忆(STM/LTM)、长期抑制/长期增强(LTD/LTP)和LIF得到了有效描述。此外,基于突触前和突触后脉冲之间的时间间隔,从STDP中提取并拟合了反向传播中迭代权重的更新规则。另外,通道的突触后电流直接连接到LIF模式的超大规模集成电路(VLSI)实现,该实现可基于膜电位阈值将高频信息转换为稀疏脉冲。泄漏积分器模块、发放/检测器模块和频率适应模块瞬间释放累积电压以形成脉冲。最后,我们利用LIF的滤波特性对属于脑电图(EEG)的稳态视觉诱发电位(SSVEPs)进行重新编码。由突触晶体管深度融合的SNNs被设计用于识别EEG的40种不同频率,并将准确率提高到95.1%。这项工作为类脑芯片做出了先进贡献,并推动了人工智能的系统化和多样化发展。