Zhao Yixuan, Song Yuqing, Hu Zhaoning, Wang Wendong, Chang Zhenghua, Zhang Yan, Lu Qi, Wu Haotian, Liao Junhao, Zou Wentao, Gao Xin, Jia Kaicheng, Zhuo La, Hu Jingyi, Xie Qin, Zhang Rui, Wang Xiaorui, Sun Luzhao, Li Fangfang, Zheng Liming, Wang Ming, Yang Jiawei, Mao Boyang, Fang Tiantian, Wang Fuyi, Zhong Haotian, Liu Wenlin, Yan Rui, Yin Jianbo, Zhang Yanfeng, Wei Yujie, Peng Hailin, Lin Li, Liu Zhongfan
Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
Beijing Graphene Institute, Beijing, 100095, P. R. China.
Nat Commun. 2022 Jul 29;13(1):4409. doi: 10.1038/s41467-022-31887-z.
The availability of graphene and other two-dimensional (2D) materials on a wide range of substrates forms the basis for large-area applications, such as graphene integration with silicon-based technologies, which requires graphene on silicon with outperforming carrier mobilities. However, 2D materials were only produced on limited archetypal substrates by chemical vapor deposition approaches. Reliable after-growth transfer techniques, that do not produce cracks, contamination, and wrinkles, are critical for layering 2D materials onto arbitrary substrates. Here we show that, by incorporating oxhydryl groups-containing volatile molecules, the supporting films can be deformed under heat to achieve a controllable conformal contact, enabling the large-area transfer of 2D films without cracks, contamination, and wrinkles. The resulting conformity with enhanced adhesion facilitates the direct delamination of supporting films from graphene, providing ultraclean surfaces and carrier mobilities up to 1,420,000 cm V s at 4 K.
石墨烯和其他二维（2D）材料在多种衬底上的可得性构成了大面积应用的基础，例如石墨烯与硅基技术的集成，这需要在硅上生长具有优异载流子迁移率的石墨烯。然而，通过化学气相沉积方法，二维材料仅在有限的典型衬底上制备。可靠的生长后转移技术，即不产生裂纹、污染和褶皱的技术，对于将二维材料层叠到任意衬底上至关重要。在这里，我们表明，通过引入含羟基的挥发性分子，支撑膜可以在加热下变形以实现可控的共形接触，从而实现二维薄膜的大面积转移，且无裂纹、无污染和褶皱。由此产生的增强附着力的共形性有助于支撑膜与石墨烯直接分层，提供超清洁表面，并在4K温度下实现高达1420000 cm² V⁻¹ s⁻¹ 的载流子迁移率。
