Shojaei Fazel, Zhang Qinghua, Zhuang Xiaoying, Mortazavi Bohayra
Department of Chemistry, Faculty of Nano and Bioscience and Technology, Persian Gulf University, Bushehr, 75169, Iran.
Institute of Photonics, Department of Mathematics and Physics, Leibniz Universität Hannover, Welfengarten 1A, 30167, Hannover, Germany.
Discov Nano. 2024 Jun 11;19(1):99. doi: 10.1186/s11671-024-04046-0.
Recently, the synthesis of oxidized holey graphene with the chemical formula CO has been reported (J. Am. Chem. Soc. 2024, 146, 4532). We herein employed a combination of density functional theory (DFT) and machine learning interatomic potential (MLIP) calculations to investigate the electronic, optical, mechanical and thermal properties of the CO monolayer, and compared our findings with those of its CN counterpart. Our analysis shows that while the CN monolayer exhibits delocalized π-conjugation and shows a 2.47 eV direct-gap semiconducting behavior, the CO counterpart exhibits an indirect gap of 3.47 eV. We found that while the CN monolayer exhibits strong absorption in the visible spectrum, the initial absorption peaks in the CO lattice occur at around 5 eV, falling within the UV spectrum. Notably, we found that the CO nanosheet presents significantly higher tensile strength compared to its CN counterpart. MLIP-based calculations show that at room temperature, the CO nanosheet can exhibit remarkably high tensile strength and lattice thermal conductivity of 42 GPa and 129 W/mK, respectively. The combined insights from DFT and MLIP-based results provide a comprehensive understanding of the electronic and optical properties of CO nanosheets, suggesting them as mechanically robust and highly thermally conductive wide bandgap semiconductors.
最近,已报道了化学式为CO的氧化多孔石墨烯的合成(《美国化学会志》,2024年,第146卷,第4532页)。我们在此采用密度泛函理论(DFT)和机器学习原子间势(MLIP)计算相结合的方法,研究了CO单层的电子、光学、力学和热学性质,并将我们的研究结果与其CN对应物的结果进行了比较。我们的分析表明,虽然CN单层表现出离域π共轭,并呈现出2.47 eV的直接带隙半导体行为,但CO对应物表现出3.47 eV的间接带隙。我们发现,虽然CN单层在可见光谱中表现出强烈吸收,但CO晶格中的初始吸收峰出现在约5 eV处,属于紫外光谱范围。值得注意的是,我们发现CO纳米片的拉伸强度明显高于其CN对应物。基于MLIP的计算表明,在室温下,CO纳米片可分别表现出高达42 GPa的拉伸强度和129 W/mK的晶格热导率。来自DFT和基于MLIP的结果的综合见解提供了对CO纳米片电子和光学性质的全面理解,表明它们是机械坚固且具有高导热性的宽带隙半导体。