Ghods Soheil, Lee Hyunjin, Choi Jun-Hui, Moon Ji-Yun, Kim Sein, Kim Seung-Il, Kwun Hyung Jun, Josline Mukkath Joseph, Kim Chan Young, Hyun Sang Hwa, Kim Sang Won, Son Seok-Kyun, Lee Taehun, Lee Yoon Kyeung, Heo Keun, Novoselov Kostya S, Lee Jae-Hyun
Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea.
School of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896, Korea.
ACS Nano. 2024 Sep 12. doi: 10.1021/acsnano.4c07585.
The relentless miniaturization inherent in complementary metal-oxide semiconductor technology has created challenges at the interface of two-dimensional (2D) materials and metal electrodes. These challenges, predominantly stemming from metal-induced gap states (MIGS) and Schottky barrier heights (SBHs), critically impede device performance. This work introduces an innovative implementation of damage-free SbTe topological van der Waals (T-vdW) contacts, representing an ultimate contact electrode for 2D materials. We successfully fabricate p-type and n-type transistors using monolayer and multilayer WSe, achieving ultralow SBH (∼24 meV) and contact resistance (∼0.71 kΩ·μm). Simulations highlight the role of topological surface states in SbTe, which effectively mitigate the MIGS effect, thereby significantly elevating device efficiency. Our experimental insights revealed the semiohmic behavior of SbTe T-vdW contacts, with an exceptional photoresponsivity of 716 A/W and rapid response times of approximately 60 μs. The findings presented herein herald topological contacts as a superior alternative to traditional metal contacts, potentially revolutionizing the performance of miniaturized electronic and optoelectronic devices.
互补金属氧化物半导体技术中固有的持续小型化在二维（2D）材料与金属电极的界面处带来了挑战。这些挑战主要源于金属诱导能隙态（MIGS）和肖特基势垒高度（SBH），严重阻碍了器件性能。这项工作引入了一种无损伤的SbTe拓扑范德华（T-vdW）接触的创新实施方案，它是二维材料的理想接触电极。我们使用单层和多层WSe成功制造了p型和n型晶体管，实现了超低的SBH（约24 meV）和接触电阻（约0.71 kΩ·μm）。模拟突出了SbTe中拓扑表面态的作用，其有效减轻了MIGS效应，从而显著提高了器件效率。我们的实验结果揭示了SbTe T-vdW接触的半欧姆行为，具有716 A/W的优异光响应度和约60 μs的快速响应时间。本文提出的研究结果预示着拓扑接触是传统金属接触的优越替代品，可能会彻底改变小型化电子和光电器件的性能。
