Karimi Koosha, Fardoost Ali, Javanmard Mehdi
Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, New Brunswick, NJ 08854, USA.
Micromachines (Basel). 2024 Sep 25;15(10):1187. doi: 10.3390/mi15101187.
The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk CMOS, exhibit favorable electrostatic characteristics and offer power/performance benefits, scalability, and control over short-channel effects. Simulations provide insights into functionality and leakage, addressing off-current issues common in narrow band-gap materials within a CMOS-compatible process. Multiple structures have been introduced for FinFETs. Moreover, some studies on the fabrication of FinFETs using different materials have been discussed. Despite their potential, challenges like corner effects, quantum effects, width quantization, layout dependencies, and parasitics have been acknowledged. In the post-planar CMOS landscape, FinFETs show potential for scalability in nanoscale CMOS, which leads to novel structures for them. Finally, recent developments in FinFET-based sensors are discussed. In a general view, this comprehensive review delves into the intricacies of FinFET fabrication, exploring historical development, classifications, and cutting-edge ideas for the used materials and FinFET application, i.e., sensing.
本综述探讨了由近期技术进步推动的对3D MOSFET（如鳍式场效应晶体管）需求的激增。鳍式场效应晶体管被定位为体CMOS的有前途的替代品，具有良好的静电特性，并提供功率/性能优势、可扩展性以及对短沟道效应的控制。模拟为功能和泄漏提供了见解，解决了CMOS兼容工艺中窄带隙材料常见的截止电流问题。已经为鳍式场效应晶体管引入了多种结构。此外，还讨论了一些关于使用不同材料制造鳍式场效应晶体管的研究。尽管它们具有潜力，但诸如拐角效应、量子效应、宽度量化、布局依赖性和寄生效应等挑战也已得到认可。在平面CMOS之后的领域中，鳍式场效应晶体管在纳米级CMOS中显示出可扩展性的潜力，这导致了它们的新颖结构。最后，讨论了基于鳍式场效应晶体管的传感器的最新进展。总体而言，这篇全面的综述深入探讨了鳍式场效应晶体管制造的复杂性，探索了其历史发展、分类以及所用材料和鳍式场效应晶体管应用（即传感）的前沿理念。
