Horn Connor P, Wicker Christina, Wellisz Antoni, Zeledon Cyrus, Nittala Pavani Vamsi Krishna, Heremans F Joseph, Awschalom David D, Guha Supratik
Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.
Material Science Division and Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States.
ACS Nano. 2024 Nov 12;18(45):31381-31389. doi: 10.1021/acsnano.4c10978. Epub 2024 Oct 29.
We detail scientific and engineering advances which enable the controlled spalling and layer transfer of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an ideal semiconductor for power electronics. Moreover, 4H-SiC is an excellent host of solid-state atomic defect qubits for quantum computing and quantum networking. Because 4H-SiC substrates are expensive (due to long growth times and limited yield), techniques for removal and transfer of bulk-quality films are desirable for substrate reuse and integration of the separated films. In this work, we utilize updated approaches for stressor layer thickness control and spalling crack initiation to demonstrate controlled spalling of 4H-SiC, the highest fracture toughness crystal spalled to date. We achieve coherent spin control of neutral divacancy (VV) qubit ensembles and measure a quasi-bulk spin T of 79.7 μs in the spalled films.
我们详细介绍了一些科学和工程方面的进展，这些进展能够实现从块状衬底上可控地剥落和转移单晶4H碳化硅（4H-SiC）。4H-SiC的特性，包括高导热性和宽带隙，使其成为功率电子学的理想半导体。此外，4H-SiC是用于量子计算和量子网络的固态原子缺陷量子比特的优良宿主。由于4H-SiC衬底价格昂贵（由于生长时间长且产量有限），因此对于衬底再利用和分离薄膜的集成而言，去除和转移高质量块状薄膜的技术是很有必要的。在这项工作中，我们利用更新的方法来控制应力层厚度并引发剥落裂纹，以证明4H-SiC的可控剥落，4H-SiC是迄今为止剥落的断裂韧性最高的晶体。我们实现了中性双空位（VV）量子比特系综的相干自旋控制，并在剥落的薄膜中测量到了79.7 μs的准体自旋弛豫时间T。
