De Koninck Yannick, Caer Charles, Yudistira Didit, Baryshnikova Marina, Sar Huseyin, Hsieh Ping-Yi, Özdemir Cenk Ibrahim, Patra Saroj Kanta, Kuznetsova Nadezda, Colucci Davide, Milenin Alexey, Yimam Andualem Ali, Morthier Geert, Van Thourhout Dries, Verheyen Peter, Pantouvaki Marianna, Kunert Bernardette, Van Campenhout Joris
imec, Leuven, Belgium.
NVidia Corporation, Roskilde, Denmark.
Nature. 2025 Jan;637(8044):63-69. doi: 10.1038/s41586-024-08364-2. Epub 2025 Jan 1.
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world. However, the lack of highly scalable, native complementary metal-oxide-semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxy of III-V materials remains the pinnacle of cost-effective on-chip light sources. Here we report the electrically driven gallium arsenide (GaAs)-based laser diodes fully fabricated on 300-mm Si wafers in a CMOS pilot manufacturing line based on a new integration approach, nano-ridge engineering. GaAs nano-ridge waveguides with embedded p-i-n diodes and InGaAs quantum wells are grown at high quality on a wafer scale. Room-temperature continuous-wave lasing is demonstrated at wavelengths around 1,020 nm in more than 300 devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz and laser operation up to 55 °C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond.
硅光子学是一项快速发展的技术，有望彻底改变我们通信、计算和感知世界的方式。然而，缺乏高度可扩展的、原生互补金属氧化物半导体（CMOS）集成光源是阻碍其广泛应用的主要因素之一。尽管在将III-V族光源与硅进行混合和异质集成方面取得了显著进展，但通过III-V族材料直接外延进行单片集成仍然是具有成本效益的片上光源的巅峰之作。在此，我们报告了基于一种新的集成方法——纳米脊工程，在CMOS中试生产线的300毫米硅晶圆上完全制造的基于砷化镓（GaAs）的电驱动激光二极管。带有嵌入式p-i-n二极管和InGaAs量子阱的GaAs纳米脊波导在晶圆规模上高质量生长。在整个晶圆上的300多个器件中，在波长约1020纳米处实现了室温连续波激射，阈值电流低至5毫安，输出功率超过1毫瓦，激光线宽低至46兆赫兹，激光工作温度高达55摄氏度。这些结果说明了III-V/Si纳米脊工程概念在硅光子学平台中用于激光二极管单片集成的潜力，为未来在光学传感、互连等领域对成本敏感的大规模应用提供了可能。
