Aleithan Shrouq H, Wickramasinghe Thushan E, Lindquist Miles, Khadka Sudiksha, Stinaff Eric
Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701, United States.
ACS Omega. 2019 May 31;4(5):9557-9562. doi: 10.1021/acsomega.9b00955.
The difficulty of processing two-dimensional (2D) transition metal dichalcogenide (TMD) materials into working devices with any scalability is one of the largest impediments to capitalizing on their industrial promise. Here, we describe a versatile, simple, and scalable technique to directly grow self-contacted thin-film materials over a range of TMDs (MoS, MoSe, WS, and WSe), where predeposited bulk metallic contacts serve as the nucleation site for the TMD material to grow, forming naturally contacted device structures in a single step. The conditions for growth as well as optical and physical properties are reported. Because the material grows controllably around the lithographically defined patterns, wafer scale circuits and complex device geometries can be envisioned, including lateral heterostructures of different TMD materials.
将二维（2D）过渡金属二硫属化物（TMD）材料加工成具有任何可扩展性的实用器件存在困难，这是充分利用其工业前景的最大障碍之一。在此，我们描述了一种通用、简单且可扩展的技术，可在一系列TMD（MoS、MoSe、WS和WSe）上直接生长自接触薄膜材料，其中预先沉积的块状金属接触作为TMD材料生长的成核位点，一步形成自然接触的器件结构。报告了生长条件以及光学和物理性质。由于材料围绕光刻定义的图案可控生长，因此可以设想晶圆级电路和复杂的器件几何形状，包括不同TMD材料的横向异质结构。
