Boukhvalov D W, Zhumabay B, Kusherova P, Rakymetov B, Tynyshtykbayev K B, Serikkanov A S, Chuchvaga N V
College of Science, Institute of Materials Physics and Chemistry, Nanjing Forestry University Nanjing 210037 P. R. China.
Institute of Physics and Technology, Satbayev University Ibragimov Str. 11 Almaty 0500322 Kazakhstan
RSC Adv. 2025 Mar 3;15(9):6794-6802. doi: 10.1039/d5ra00703h. eCollection 2025 Feb 26.
In this work, the fabrication of the material for solar vapor generation using porous silicon treated by electrochemical etching, metal-assisted chemical etching, and electrochemical metal-assisted etching is reported. The proposed method does not require high-cost equipment and permits the production of centimeter-sized samples within minutes. Morphologies of the samples have been studied by scanning electron microscopy and X-ray diffraction spectroscopy, and the distribution of the impurities has been observed by dispersive X-ray analysis. First-principles modeling has been used to simulate the effect of nickel dopants on the electronic structure of the silicon matrix. Measurements of Raman spectra demonstrate a colossal increase in the signal intensity for all samples. The estimated vaporization performance of studied samples varies from 4.4 kg m h up to 5.2 kg m h, more than four times larger than previously reported for silicon-based SVG systems prepared by more sophisticated techniques. The results of the measurements demonstrate the tiny influence of low-concentration doping on vaporization performance. On the contrary, higher porosity and more significant numbers of defects increase the vaporizing efficiency of studied samples.
在这项工作中，报道了使用经电化学蚀刻、金属辅助化学蚀刻和电化学金属辅助蚀刻处理的多孔硅制备用于太阳能蒸汽产生的材料。所提出的方法不需要高成本设备，并且能够在几分钟内生产出厘米尺寸的样品。通过扫描电子显微镜和X射线衍射光谱研究了样品的形貌，并通过色散X射线分析观察了杂质的分布。第一性原理建模已被用于模拟镍掺杂剂对硅基体电子结构的影响。拉曼光谱测量表明，所有样品的信号强度都有巨大增加。所研究样品的估计汽化性能在4.4 kg m h至5.2 kg m h之间变化，比以前通过更复杂技术制备的硅基太阳能蒸汽发生（SVG）系统所报道的性能大四倍多。测量结果表明低浓度掺杂对汽化性能的影响很小。相反，更高的孔隙率和更多的缺陷数量提高了所研究样品的汽化效率。
