Lee Jung-Woo, Park See-On, Yun Seong-Yun, Kim Yeeun, Myung Hyun, Choi Shinhyun, Choi Yang-Kyu
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Daejeon, Yuseong-gu 34141, Republic of Korea.
SK Hynix Inc., Icheon 17336, Korea.
ACS Nano. 2025 Apr 8;19(13):13063-13072. doi: 10.1021/acsnano.4c18145. Epub 2025 Mar 26.
Monolithic 3D integration of neuron and synapse devices is considered a promising solution for energy-efficient and compact neuromorphic hardware. However, achieving optimal performance in both training and inference remains challenging as these processes require different synapse devices with reliable endurance and long retention. Here, we introduce a decoupling strategy to separate training and inference using monolithically integrated neuromorphic hardware with layer-by-layer fabrication. This 3D neuromorphic hardware includes neurons consisting of a single transistor (1T-neuron) in the first layer, long-term operational synapses composed of a single thin-film transistor with a SONOS structure (1TFT-synapses) in the second layer for inference, and durable synapses composed of a memristor (1M-synapses) in the third layer for training. A 1TFT-synapse, utilizing a charge-trap layer, exhibits long retention properties favorable for inference tasks. In contrast, a 1M-synapse, leveraging anion movement at the interface, demonstrates robust endurance for repetitive weight updates during training. With the proposed hybrid synapse architecture, frequent training can be performed using the 1M-synapses with robust endurance, while intermittent inference can be managed using the 1TFT-synapses with long-term retention. This decoupling of synaptic functions is advantageous for achieving a reliable spiking neural network (SNN) in neuromorphic computing.
神经元和突触器件的单片3D集成被认为是实现高能效和紧凑型神经形态硬件的一个有前景的解决方案。然而,要在训练和推理中都实现最佳性能仍然具有挑战性,因为这些过程需要具有可靠耐久性和长保持性的不同突触器件。在此,我们引入一种解耦策略,使用具有逐层制造工艺的单片集成神经形态硬件来分离训练和推理。这种3D神经形态硬件包括:第一层中由单个晶体管组成的神经元(1T神经元)、第二层中用于推理的由具有SONOS结构的单个薄膜晶体管组成的长期可操作突触(1TFT突触)以及第三层中用于训练的由忆阻器组成的耐用突触(1M突触)。利用电荷俘获层的1TFT突触表现出有利于推理任务的长保持特性。相比之下,利用界面处阴离子移动的1M突触在训练期间对重复的权重更新表现出强大的耐久性。通过所提出的混合突触架构,可以使用具有强大耐久性的1M突触进行频繁训练,同时可以使用具有长期保持性的1TFT突触来管理间歇性推理。这种突触功能的解耦有利于在神经形态计算中实现可靠的脉冲神经网络(SNN)。