Yao Yi-Ju, Fu Yu-Min, Chen Yu-Hung, Wei Chen-You, Huang Kai-Ting, Luo Guang-Li, Hou Fu-Ju, Lai Yu-Sheng, Wu Yung-Chun
College of Semiconductor Research, National Tsing Hua University, Hsinchu 30013, Taiwan.
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
Materials (Basel). 2025 Apr 10;18(8):1740. doi: 10.3390/ma18081740.
This paper presents an advanced dielectric engineering approach utilizing a composition-dependent hafnium zirconium oxide (HfZrO) superlattice (SL) structure for Si nanosheet gate-all-around field-effect transistors (Si NSGAAFETs). The dielectric (DE) properties of solid solution (SS) and SL HfZrO capacitors were systematically characterized through capacitance-voltage (C-V) and polarization-voltage (P-V) measurements under varying annealing conditions. A high dielectric constant (k-value) of 59 was achieved in SL-HfZrO, leading to a substantial reduction in equivalent oxide thickness (EOT). Furthermore, the SL-HfZrO dielectric was integrated into Si NSGAAFETs, with the interfacial layer (IL) further optimized via NH plasma treatment. The resulting devices exhibited superior electrical performance, including an enhanced ON-OFF current ratio (I/I) reaching 10, an increased drive current, and significantly reduced gate leakage. These results highlight the potential of SL-HfZrO as a high-k dielectric solution for overcoming EOT scaling challenges in advanced CMOS technology and enabling further innovation in next-generation logic applications.
本文提出了一种先进的介电工程方法，该方法利用成分依赖的铪锆氧化物（HfZrO）超晶格（SL）结构来制备硅纳米片全栅场效应晶体管（Si NSGAAFETs）。通过在不同退火条件下进行电容-电压（C-V）和极化-电压（P-V）测量，系统地表征了固溶体（SS）和SL HfZrO电容器的介电（DE）特性。在SL-HfZrO中实现了59的高介电常数（k值），从而使等效氧化层厚度（EOT）大幅降低。此外，将SL-HfZrO电介质集成到Si NSGAAFETs中，并通过NH等离子体处理进一步优化界面层（IL）。所得器件表现出优异的电学性能，包括增强的开/关电流比（I/I）达到10、驱动电流增加以及栅极泄漏显著降低。这些结果突出了SL-HfZrO作为一种高k电介质解决方案的潜力，可用于克服先进CMOS技术中的EOT缩放挑战，并推动下一代逻辑应用的进一步创新。
