Kim Kyoung Yeon, Park Hong-Hyun, Jin Seonghoon, Kwon Uihui, Choi Woosung, Kim Dae Sin
Computional & Science Engineering Team, Semiconductor Research and Development Center, Samsung Electronics, Hwasung-si, Gueonggi-do, Republic of Korea.
TCAD Laboratory, AHQ Research and Development, Samsung Semiconductor INC., San Jose, CA, USA.
Commun Eng. 2025 May 22;4(1):92. doi: 10.1038/s44172-025-00435-0.
In nanoscale transistors, quantum mechanical effects such as tunneling and quantization significantly influence device characteristics. However, large-scale quantum transport simulation remains a challenging field, making it difficult to account for quantum mechanical effects arising from the complex device geometries. Here, based on large-scale quantum transport simulations, we demonstrate that quantum geometrical effects in stacked nanosheet GAAFETs significantly impact carrier injection characteristics. Discontinuities in confinement energy at the constriction-the junction between the bulk source/drain and nanosheet channel-cause substantial carrier backscattering. This degradation becomes more severe as electrons experience higher effective energy barriers, and is further exacerbated at lower scattering rate, lower doping concentrations, and near Schottky barriers where electron depletion regions form. Considering these quantum mechanical bottlenecks, proper device optimization for future technology nodes requires a full quantum-based device structure design at the large-scale level, which enables unique optimization strategies beyond conventional classical prediction.
在纳米级晶体管中，诸如隧穿和量子化等量子力学效应会显著影响器件特性。然而，大规模量子输运模拟仍然是一个具有挑战性的领域，这使得难以考虑由复杂器件几何结构产生的量子力学效应。在此，基于大规模量子输运模拟，我们证明了堆叠纳米片全栅场效应晶体管中的量子几何效应会显著影响载流子注入特性。在缩颈处（即体源/漏与纳米片沟道之间的结）的限制能量不连续性会导致大量载流子背散射。随着电子经历更高的有效能量势垒，这种退化会变得更加严重，并且在更低的散射率、更低的掺杂浓度以及靠近形成电子耗尽区的肖特基势垒处会进一步加剧。考虑到这些量子力学瓶颈，针对未来技术节点进行适当的器件优化需要在大规模层面进行基于全量子的器件结构设计，这能够实现超越传统经典预测的独特优化策略。
