Sen Siddhartha
Trinity College Dublin, Dublin, Ireland.
R Soc Open Sci. 2025 May 28;12(5):241977. doi: 10.1098/rsos.241977. eCollection 2025 May.
The brain is a source of continuous electrical activity, which includes one-dimensional voltage pulses (action potentials) that propagate along nerve fibres, transient localized oscillations and persistent surface oscillations in five distinct frequency bands. However, a unified theoretical framework for modelling these excitations is lacking. In this article, we provide such a framework by constructing a special surface network in which all observed brain-like signals, including surface oscillations, can be generated by topological means. Analytic expressions for all these excitations are found, and the values of the five frequency bands of surface oscillations are correctly predicted. It is shown how input signals of the system produce their own communication code to encode the information they carry and how the response output propagating signals produced carry this input information with them and can transfer it to the pathways they traverse as a non-transient topological memory structure of aligned spin-half protons. It is conjectured that the memory structure is located in the insulating sheaths of nerve fibres and is stable only if the pathways between the assembly of neurons, which represents a memory structure, include loops. The creation time and size of memory structures are estimated, and a memory-specific excitation frequency for a memory structure is identified and determined, which can be used to recall memories.
大脑是持续电活动的来源，这种电活动包括沿神经纤维传播的一维电压脉冲（动作电位）、短暂的局部振荡以及五个不同频段的持续表面振荡。然而，目前缺乏一个用于对这些激发进行建模的统一理论框架。在本文中，我们通过构建一个特殊的表面网络提供了这样一个框架，在该网络中，所有观察到的类似大脑的信号，包括表面振荡，都可以通过拓扑方式产生。我们找到了所有这些激发的解析表达式，并正确预测了表面振荡五个频段的值。文中展示了系统的输入信号如何产生自身的通信代码来编码它们所携带的信息，以及传播的响应输出信号如何携带此输入信息，并作为排列的自旋 - 1/2质子的非瞬态拓扑记忆结构将其传递到它们所经过的路径。据推测，记忆结构位于神经纤维的绝缘鞘中，并且只有当代表记忆结构的神经元集合之间的路径包含回路时才是稳定的。我们估计了记忆结构的创建时间和大小，并确定了记忆结构的特定记忆激发频率，该频率可用于回忆记忆。
