Jansons Aris, Terehovs Andrejs, Spustaka Agnese, Gabrusenoks Jevgenijs, Chikvaidze George, Sarakovskis Anatolijs, Kunakova Gunta
Faculty of Science and Technology, Institute of Chemical Physics, University of Latvia, Jelgavas street 1, Riga LV-1004, Latvia.
University of Latvia, Faculty of Medicine and Life Sciences, Department of Chemistry, Jelgavas street 1, Riga LV-1004, Latvia.
ACS Omega. 2025 May 12;10(20):20444-20451. doi: 10.1021/acsomega.5c00570. eCollection 2025 May 27.
Two-dimensional tungsten ditelluride (2D WTe) possesses a rich variety of unconventional properties, which are particularly promising for fundamental studies of topologically nontrivial states and their potential applications in advanced electronics and quantum technologies. Given that the majority of future applications rely on stable charge transport characteristics, the susceptibility of WTe to oxidation under ambient conditions presents a significant challenge, limiting its practical use. In this study, we present an innovative inorganic polysilazane capping layer that can be converted to silica to effectively isolate 2D WTe structures from oxygen and water. Additionally, WTe surface passivation with -hexylamine is also tested. Charge transport measurements at low temperatures for as-grown, polysilazane-capped, and -hexylamine-functionalized structures demonstrate that the developed inorganic polysilazane capping layer efficiently protects from oxidation in an ambient environment, thereby allowing 2D WTe to maintain its structural integrity and electronic characteristics over extended periods.
二维碲化钨（2D WTe）具有丰富多样的非常规特性，这对于拓扑非平凡态的基础研究及其在先进电子学和量子技术中的潜在应用特别有前景。鉴于未来的大多数应用依赖于稳定的电荷传输特性，WTe在环境条件下对氧化的敏感性构成了重大挑战，限制了其实际应用。在本研究中，我们提出了一种创新的无机聚硅氮烷封端层，它可以转化为二氧化硅，以有效地将二维WTe结构与氧气和水隔离开来。此外，还测试了用己胺对WTe进行表面钝化。对生长态、聚硅氮烷封端和己胺功能化结构在低温下进行的电荷传输测量表明，所开发的无机聚硅氮烷封端层在环境中能有效防止氧化，从而使二维WTe在较长时间内保持其结构完整性和电子特性。
