Tsuji T, Harada S, Teraji T
International Center for Young Scientists, National Institute for Materials Science, Tsukuba, Ibaraki, Japan.
Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya, Japan.
Sci Technol Adv Mater. 2025 Aug 18;26(1):2546779. doi: 10.1080/14686996.2025.2546779. eCollection 2025.
We measured the residual stress tensor in a nitrogen-doped chemical vapor deposition (001) diamond film. The stress tensor was evaluated from the amount of the shift in optically detected magnetic resonance (ODMR) spectra of NV center in the diamond. A confocal microscopy setup was used to observe the spatial variation of the stress tensor in the diamond film. We found that the components of the stress tensor, σ, σ, σ and σ+ σ+ σ, of the residual stress were approximately 0.077, -0.39, -0.67 and 1.52 GPa, respectively, in the x = [100], y = [010], z = [001] coordinate system. Regarding the components of the shear stress, σ, σ and σ, the nitrogen-doped CVD diamond film grown in this study had mainly sheared stress in the z-direction, which was the growth direction of the CVD diamond film. In addition, regarding axial stress σ+ σ+ σ, the CVD diamond film was subjected to compressive stress. Due to this compressive stress, the volume of the CVD diamond film decreased by approximately 0.073%. We considered that nitrogen doping contributed to the decrease in volume of the CVD diamond film.
我们测量了氮掺杂化学气相沉积（001）金刚石薄膜中的残余应力张量。通过金刚石中NV中心的光探测磁共振（ODMR）光谱的位移量来评估应力张量。使用共聚焦显微镜装置观察金刚石薄膜中应力张量的空间变化。我们发现在x = [100]、y = [010]、z = [001]坐标系中，残余应力的应力张量分量σ、σ、σ和σ + σ + σ分别约为0.077、-0.39、-0.67和1.52 GPa。关于剪应力分量σ、σ和σ，本研究中生长的氮掺杂CVD金刚石薄膜主要在z方向（即CVD金刚石薄膜的生长方向）存在剪应力。此外，关于轴向应力σ + σ + σ，CVD金刚石薄膜受到压应力。由于这种压应力，CVD金刚石薄膜的体积减少了约0.073%。我们认为氮掺杂促成了CVD金刚石薄膜体积的减小。
