Max Planck Institute of Microstructure Physics, Halle, Germany.
Nanotechnology. 2010 Mar 5;21(9):095302. doi: 10.1088/0957-4484/21/9/095302. Epub 2010 Jan 29.
By combining laser interference lithography and metal-assisted etching we were able to produce arrays of silicon nanowires with uniform diameters as small as 65 nm and densities exceeding 2 x 10(7) mm(-2). The wires are single crystalline, vertically aligned, arranged in a square pattern and obey strict periodicity over several cm(2). The applied technique allows for a tailoring of nanowire size and density. Using a controlled and scalable process to fabricate sub-100 nm silicon nanowires is an important step towards the realization of cost-effective electronic and thermoelectric devices.
通过将激光干涉光刻和金属辅助刻蚀相结合，我们成功制备了直径小至 65nm、密度超过 2×10(7)mm(-2)的硅纳米线阵列。这些纳米线为单晶、垂直排列、呈正方形图案排列，并且在几平方厘米的范围内具有严格的周期性。所采用的技术可对纳米线的尺寸和密度进行调整。使用可控且可扩展的工艺来制备亚 100nm 的硅纳米线，是实现具有成本效益的电子和热电器件的重要一步。
