Dan'ko Viktor, Indutnyi Ivan, Myn'ko Victor, Lukaniuk Mariia, Shepeliavyi Petro
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukrain, 45, Prospect Nauky, 03028 Kyiv, Ukraine.
Nanoscale Res Lett. 2015 Feb 27;10:83. doi: 10.1186/s11671-015-0765-y. eCollection 2015.
The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films. It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants. The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.
通过退火硫族化物玻璃（ChG）层中可逆且瞬态的光刺激结构变化，在半导体表面和金属膜上形成干涉周期性结构。结果表明，基于胺的负性蚀刻剂会溶解硫族化物膜的光照部分，即起到正性蚀刻剂的作用。在锗硫族化物玻璃上记录了衍射光栅和二维干涉结构，锗硫族化物玻璃是比传统使用的砷硫族化物更环保的化合物，并对其特性进行了研究。
