Department of Physics and Institute of Advanced Materials, Hong Kong Baptist University, Kowloon, Hong Kong SAR, People's Republic of China.
Nano Lett. 2011 Dec 14;11(12):5252-8. doi: 10.1021/nl202674t. Epub 2011 Oct 26.
In general, n-type mesoporous silicon nanowires (mp-SiNWs) are exclusively created by the two-step metal-assisted chemical etching (MACE). This work first reports that one-step MACE (in HF and AgNO3) is also capable of producing the n-type mp-SiNWs, and the developed formula is generally adapted to generate SiNWs by etching n-Si(100) with electrical resistivity over a range of 10(-3)-10(1) Ω·cm. Integrating the contribution of silicon intrinsic properties in the existing MACE mechanism explicitly accounts for the new findings and contradictions with previous studies. The as-generated mesoporous structures emit red light under laser excitation at room temperature. The red-color emission sensitively varies with temperature over a range of 16-300 K, attributed to a temperature-dependent photoluminescent mechanism.
一般来说，n 型介孔硅纳米线（mp-SiNWs）仅通过两步金属辅助化学刻蚀（MACE）来制备。这项工作首次报道了一步 MACE（在 HF 和 AgNO3 中）也能够制备 n 型 mp-SiNWs，并且所开发的配方通常适用于通过蚀刻电阻率在 10(-3)-10(1) Ω·cm 范围内的 n-Si(100)来生成 SiNWs。明确纳入硅固有性质在现有 MACE 机制中的贡献，解释了新发现，并解决了与先前研究的矛盾。所生成的介孔结构在室温下激光激发下发出红光。红色发光对 16-300 K 范围内的温度敏感变化归因于依赖于温度的光致发光机制。
