Advanced Microelectronic Center Aachen, AMO GmbH, Otto-Blumenthal-Strasse 25, 52074 Aachen, Germany.
Sci Rep. 2013;3:2592. doi: 10.1038/srep02592.
The road to the realization of complex integrated circuits based on graphene remains an open issue so far. Current graphene based integrated circuits are limited by low integration depth and significant doping variations, representing major road blocks for the success of graphene in future electronic devices. Here we report on the realization of graphene based integrated inverters and ring oscillators. By using an optimized process technology for high-performance graphene transistors with local back-gate electrodes we demonstrate that complex graphene based integrated circuits can be manufactured reproducibly, circumventing problems associated with doping variations. The fabrication process developed here is scalable and fully compatible with conventional silicon technology. Therefore, our results pave the way towards applications based on graphene transistors in future electronic devices.
到目前为止，基于石墨烯的复杂集成电路的实现道路仍然是一个悬而未决的问题。目前基于石墨烯的集成电路受到低集成深度和显著掺杂变化的限制，这是石墨烯在未来电子设备中取得成功的主要障碍。在这里，我们报告了基于石墨烯的集成电路反相器和环形振荡器的实现。通过使用具有局部背栅电极的高性能石墨烯晶体管的优化工艺技术，我们证明了复杂的基于石墨烯的集成电路可以可重复地制造，从而避免了与掺杂变化相关的问题。这里开发的制造工艺是可扩展的，并且与传统的硅技术完全兼容。因此，我们的结果为未来电子设备中基于石墨烯晶体管的应用铺平了道路。
