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单占据离子通道的随机理论。II. 延伸至浴槽中的接入电阻和电位梯度的影响。

Stochastic theory of singly occupied ion channels. II. Effects of access resistance and potential gradients extending into the bath.

作者信息

Chiu S W, Jakobsson E

机构信息

Department of Physiology and Biophysics, University of Illinois, Urbana 61801.

出版信息

Biophys J. 1989 Jan;55(1):147-57. doi: 10.1016/S0006-3495(89)82786-9.

Abstract

In a previous paper (Jakobsson, E., and S. W. Chiu. 1987. Biophys. J. 52:33-46), we presented the stochastic theory of the singly occupied ion channel as applied to sodium permeation of gramicidin channels, with the assumption of perfect equilibration between the bathing solutions and the ends of the ion channel. In the present paper we couple the previous theory to electrodiffusion of ions from the bulk of the bathing solution to the channel mouth. Our electrodiffusion calculations incorporate estimates of the potential gradients near the channel mouth due to image forces and due to the fraction of the applied potential that falls beyond the ends of the channel. To keep the diffusion calculation one-dimensional, we make the assumption that the electrical potentials in the bath exhibit hemispherical symmetry. As in the previous paper, the flux equations are fit to data on sodium permeation of normal gramicidin A, and gramicidins modified by the fluorination of the valine at the No. 1 position (Barrett Russell, E. W., L. B. Weiss, F. I. Navetta, R. E. Koeppe II, and O. S. Anderson. 1986. Biophys. J. 49:673-686). The conclusions of our previous paper with respect to the effect of fluorination on the mobility, surface potential well depth, and central barrier, are confirmed. However the absolute values of these quantities are somewhat changed when diffusive resistance to the mouth is taken into account, as in the present paper. Future possibilities for more accurate calculations by other methods are outlined.

摘要

在之前的一篇论文中(雅各布松,E.,以及S. W. 邱。1987年。《生物物理杂志》52卷:33 - 46页),我们提出了单占据离子通道的随机理论,该理论应用于短杆菌肽通道的钠渗透,并假设浴液与离子通道末端之间达到完美平衡。在本文中,我们将先前的理论与离子从大量浴液扩散到通道口的电扩散相结合。我们的电扩散计算纳入了对通道口附近由于镜像力以及施加电位中超出通道末端部分所产生的电位梯度的估计。为了使扩散计算保持一维,我们假设浴液中的电位呈现半球形对称。与之前的论文一样,通量方程与正常短杆菌肽A以及在第1位缬氨酸经氟化修饰的短杆菌肽的钠渗透数据相拟合(巴雷特·拉塞尔,E. W.,L. B. 韦斯,F. I. 纳韦塔,R. E. 科佩二世,以及O. S. 安德森。1986年。《生物物理杂志》49卷:673 - 686页)。我们之前论文中关于氟化对迁移率、表面势阱深度和中心势垒影响的结论得到了证实。然而,如本文所述,当考虑到对通道口的扩散阻力时,这些量的绝对值会有所变化。本文还概述了未来用其他方法进行更精确计算的可能性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e5b/1330449/2b24ff5a8f3f/biophysj00145-0153-a.jpg

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