Gottardi Stefano, Müller Kathrin, Bignardi Luca, Moreno-López Juan Carlos, Pham Tuan Anh, Ivashenko Oleksii, Yablonskikh Mikhail, Barinov Alexei, Björk Jonas, Rudolf Petra, Stöhr Meike
Zernike Institute for Advanced Materials, University of Groningen , Nijenborgh 4, 9747 AG Groningen, The Netherlands.
Nano Lett. 2015 Feb 11;15(2):917-22. doi: 10.1021/nl5036463. Epub 2015 Jan 29.
The epitaxial growth of graphene on catalytically active metallic surfaces via chemical vapor deposition (CVD) is known to be one of the most reliable routes toward high-quality large-area graphene. This CVD-grown graphene is generally coupled to its metallic support resulting in a modification of its intrinsic properties. Growth on oxides is a promising alternative that might lead to a decoupled graphene layer. Here, we compare graphene on a pure metallic to graphene on an oxidized copper surface in both cases grown by a single step CVD process under similar conditions. Remarkably, the growth on copper oxide, a high-k dielectric material, preserves the intrinsic properties of graphene; it is not doped and a linear dispersion is observed close to the Fermi energy. Density functional theory calculations give additional insight into the reaction processes and help explaining the catalytic activity of the copper oxide surface.
通过化学气相沉积（CVD）在具有催化活性的金属表面上外延生长石墨烯，是获得高质量大面积石墨烯最可靠的途径之一。这种通过CVD生长的石墨烯通常与其金属载体耦合，从而改变其固有特性。在氧化物上生长是一种有前景的替代方法，可能会得到解耦的石墨烯层。在此，我们比较了在相似条件下通过单步CVD工艺生长的，纯金属表面上的石墨烯和氧化铜表面上的石墨烯。值得注意的是，在高介电常数的氧化铜材料上生长能保留石墨烯的固有特性；它没有被掺杂，并且在费米能级附近观察到线性色散。密度泛函理论计算为反应过程提供了更多见解，并有助于解释氧化铜表面的催化活性。
