Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA.
Adv Mater. 2016 Nov;28(44):9735-9743. doi: 10.1002/adma.201601104. Epub 2016 Sep 20.
Large-area "in situ" transition-metal substitution doping for chemical-vapor-deposited semiconducting transition-metal-dichalcogenide monolayers deposited on dielectric substrates is demonstrated. In this approach, the transition-metal substitution is stable and preserves the monolayer's semiconducting nature, along with other attractive characteristics, including direct-bandgap photoluminescence.
大面积“原位”过渡金属取代掺杂的化学气相沉积半导体过渡金属二卤化物单层沉积在介电衬底上得以实现。在此方法中，过渡金属取代是稳定的，并且保留了单层的半导体性质，以及其他有吸引力的特性，包括直接带隙光致发光。
