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铂/氧化铪/氧化锌/氮化钛忆阻器系统的单无机突触中模拟的突触可塑性和学习行为

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO/ZnO/TiN Memristive System.

作者信息

Wang Lai-Guo, Zhang Wei, Chen Yan, Cao Yan-Qiang, Li Ai-Dong, Wu Di

机构信息

National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, People's Republic of China.

Anhui Key Laboratory of Functional Coordination Compounds, School of Chemistry and Chemical Engineering, Anqing Normal University, Anhui, 246011, People's Republic of China.

出版信息

Nanoscale Res Lett. 2017 Dec;12(1):65. doi: 10.1186/s11671-017-1847-9. Epub 2017 Jan 23.

DOI:10.1186/s11671-017-1847-9
PMID:28116612
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5256630/
Abstract

In this work, a kind of new memristor with the simple structure of Pt/HfO/ZnO/TiN was fabricated completely via combination of thermal-atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). The synaptic plasticity and learning behaviors of Pt/HfO/ZnO/TiN memristive system have been investigated deeply. Multilevel resistance states are obtained by varying the programming voltage amplitudes during the pulse cycling. The device conductance can be continuously increased or decreased from cycle to cycle with better endurance characteristics up to about 3 × 10 cycles. Several essential synaptic functions are simultaneously achieved in such a single double-layer of HfO/ZnO device, including nonlinear transmission properties, such as long-term plasticity (LTP), short-term plasticity (STP), and spike-timing-dependent plasticity. The transformation from STP to LTP induced by repetitive pulse stimulation is confirmed in Pt/HfO/ZnO/TiN memristive device. Above all, simple structure of Pt/HfO/ZnO/TiN by ALD technique is a kind of promising memristor device for applications in artificial neural network.

摘要

在这项工作中，一种具有Pt/HfO/ZnO/TiN简单结构的新型忆阻器完全通过热原子层沉积（TALD）和等离子体增强原子层沉积（PEALD）相结合的方法制备而成。对Pt/HfO/ZnO/TiN忆阻系统的突触可塑性和学习行为进行了深入研究。通过在脉冲循环期间改变编程电压幅度获得多级电阻状态。器件电导可以在连续循环中不断增加或减少，具有高达约3×10⁴ 次循环的更好的耐久性特性。在这样一个单一的HfO/ZnO双层器件中同时实现了几种基本的突触功能，包括非线性传输特性，如长期可塑性（LTP）、短期可塑性（STP）和尖峰时间依赖可塑性。在Pt/HfO/ZnO/TiN忆阻器件中证实了由重复脉冲刺激引起的从STP到LTP的转变。最重要的是，通过ALD技术制备的Pt/HfO/ZnO/TiN简单结构是一种在人工神经网络应用中很有前景的忆阻器器件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d11/5256630/938f141a3114/11671_2017_1847_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d11/5256630/7f6e098c4b94/11671_2017_1847_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d11/5256630/bc5b0e76c29e/11671_2017_1847_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d11/5256630/6e777ec55856/11671_2017_1847_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d11/5256630/b29ec30d5d9a/11671_2017_1847_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d11/5256630/938f141a3114/11671_2017_1847_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d11/5256630/7f6e098c4b94/11671_2017_1847_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d11/5256630/bc5b0e76c29e/11671_2017_1847_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d11/5256630/6e777ec55856/11671_2017_1847_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d11/5256630/b29ec30d5d9a/11671_2017_1847_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d11/5256630/938f141a3114/11671_2017_1847_Fig5_HTML.jpg

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本文引用的文献

1
Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems.用于实现稳健高精度神经形态计算系统的超低能耗三维氧化物基电子突触。
ACS Nano. 2014 Jul 22;8(7):6998-7004. doi: 10.1021/nn501824r. Epub 2014 Jun 12.
2
A low energy oxide-based electronic synaptic device for neuromorphic visual systems with tolerance to device variation.用于具有器件变化容限的神经形态视觉系统的低能氧化物基电子突触器件。
Adv Mater. 2013 Mar 25;25(12):1774-9. doi: 10.1002/adma.201203680. Epub 2013 Jan 27.
3
On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration.
RSC Adv. 2023 Apr 28;13(19):13292-13302. doi: 10.1039/d3ra02075d. eCollection 2023 Apr 24.
4
Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.基于Ag/Ag:ZnO/Pt忆阻器从突触模拟到非易失性电阻开关行为的转变。
RSC Adv. 2022 Nov 23;12(52):33634-33640. doi: 10.1039/d2ra05483c. eCollection 2022 Nov 22.
5
Emulating Artificial Synaptic Plasticity Characteristics from SiO-Based Conductive Bridge Memories with Pt Nanoparticles.利用铂纳米颗粒模拟基于SiO的导电桥接存储器的人工突触可塑性特征。
Micromachines (Basel). 2021 Mar 15;12(3):306. doi: 10.3390/mi12030306.
6
Pseudo-Interface Switching of a Two-Terminal TaO/HfO Synaptic Device for Neuromorphic Applications.用于神经形态应用的双端TaO/HfO突触器件的伪界面切换
Nanomaterials (Basel). 2020 Aug 7;10(8):1550. doi: 10.3390/nano10081550.
7
A Neuromorphic Device Implemented on a Salmon-DNA Electrolyte and its Application to Artificial Neural Networks.一种基于鲑鱼DNA电解质实现的神经形态器件及其在人工神经网络中的应用。
Adv Sci (Weinh). 2019 Jul 15;6(17):1901265. doi: 10.1002/advs.201901265. eCollection 2019 Sep 4.
8
Atomic Layer Deposited HfZrO-based Flexible Memristor with Short/Long-Term Synaptic Plasticity.具有短期/长期突触可塑性的原子层沉积铪锆氧化物基柔性忆阻器
Nanoscale Res Lett. 2019 Mar 15;14(1):102. doi: 10.1186/s11671-019-2933-y.
9
Fabrication and Characterization of ZnO Nano-Clips by the Polyol-Mediated Process.通过多元醇介导法制备ZnO纳米夹及其表征
Nanoscale Res Lett. 2018 Feb 9;13(1):47. doi: 10.1186/s11671-018-2458-9.
通过局部离子迁移实现的按需纳米器件的电和神经形态多功能。
ACS Nano. 2012 Nov 27;6(11):9515-21. doi: 10.1021/nn302510e. Epub 2012 Oct 31.
4
Short-term memory to long-term memory transition in a nanoscale memristor.纳米级忆阻器中的短期记忆到长期记忆的转变。
ACS Nano. 2011 Sep 27;5(9):7669-76. doi: 10.1021/nn202983n. Epub 2011 Aug 26.
5
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses.在单个无机突触中模拟短期可塑性和长时程增强。
Nat Mater. 2011 Jun 26;10(8):591-5. doi: 10.1038/nmat3054.
6
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device.纳米二氧化钛双层电阻开关器件的模拟存储和尖峰时间依赖型可塑性特性。
Nanotechnology. 2011 Jun 24;22(25):254023. doi: 10.1088/0957-4484/22/25/254023. Epub 2011 May 16.
7
Learning abilities achieved by a single solid-state atomic switch.通过单个固态原子开关实现的学习能力。
Adv Mater. 2010 Apr 22;22(16):1831-4. doi: 10.1002/adma.200903680.
8
Ionic/electronic hybrid materials integrated in a synaptic transistor with signal processing and learning functions.集成在具有信号处理和学习功能的突触晶体管中的离子/电子混合材料。
Adv Mater. 2010 Jun 11;22(22):2448-53. doi: 10.1002/adma.201000282.
9
Nanoscale memristor device as synapse in neuromorphic systems.纳米级忆阻器器件作为神经形态系统中的突触。
Nano Lett. 2010 Apr 14;10(4):1297-301. doi: 10.1021/nl904092h.
10
Memristive switching mechanism for metal/oxide/metal nanodevices.金属/氧化物/金属纳米器件的忆阻开关机制
Nat Nanotechnol. 2008 Jul;3(7):429-33. doi: 10.1038/nnano.2008.160. Epub 2008 Jun 15.