Hefei National Laboratory for Physical Sciences at Microscale, CAS Center for Excellence in Nanoscience, Collaborative Innovation Center of Chemistry for Energy Materials, International Center for Quantum Design of Functional Materials, Department of Physics, Synergetic Innovation Center of Quantum Information and Quantum Physics, Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science & Technology of China , Hefei, Anhui 230026, P. R. China.
J Am Chem Soc. 2017 Mar 8;139(9):3438-3445. doi: 10.1021/jacs.6b11263. Epub 2017 Feb 24.
Unearthing an ideal model for disclosing the role of defect sites in solar CO reduction remains a great challenge. Here, freestanding gram-scale single-unit-cell o-BiVO layers are successfully synthesized for the first time. Positron annihilation spectrometry and X-ray fluorescence unveil their distinct vanadium vacancy concentrations. Density functional calculations reveal that the introduction of vanadium vacancies brings a new defect level and higher hole concentration near Fermi level, resulting in increased photoabsorption and superior electronic conductivity. The higher surface photovoltage intensity of single-unit-cell o-BiVO layers with rich vanadium vacancies ensures their higher carriers separation efficiency, further confirmed by the increased carriers lifetime from 74.5 to 143.6 ns revealed by time-resolved fluorescence emission decay spectra. As a result, single-unit-cell o-BiVO layers with rich vanadium vacancies exhibit a high methanol formation rate up to 398.3 μmol g h and an apparent quantum efficiency of 5.96% at 350 nm, much larger than that of single-unit-cell o-BiVO layers with poor vanadium vacancies, and also the former's catalytic activity proceeds without deactivation even after 96 h. This highly efficient and spectrally stable CO photoconversion performances hold great promise for practical implementation of solar fuel production.
挖掘揭示太阳能 CO 还原中缺陷部位作用的理想模型仍然是一个巨大的挑战。在这里,首次成功合成了独立式克级单胞 o-BiVO 层。正电子湮没谱和 X 射线荧光揭示了它们不同的钒空位浓度。密度泛函计算表明,引入钒空位会在费米能级附近带来新的缺陷能级和更高的空穴浓度,从而增加光吸收和提高电子电导率。具有丰富钒空位的单胞 o-BiVO 层的更高表面光电压强度确保了其更高的载流子分离效率,这进一步通过时间分辨荧光发射衰减谱证实了载流子寿命从 74.5 到 143.6 ns 的增加。结果,具有丰富钒空位的单胞 o-BiVO 层表现出高达 398.3 μmol g h 的甲醇形成速率和 350nm 下 5.96%的表观量子效率,远高于具有贫钒空位的单胞 o-BiVO 层,并且前者的催化活性在 96 小时后仍没有失活。这种高效且光谱稳定的 CO 光转化性能为实际实现太阳能燃料生产提供了巨大的前景。