Tokel Onur, Turnali Ahmet, Makey Ghaith, Elahi Parviz, Çolakoğlu Tahir, Ergeçen Emre, Yavuz Özgün, Hübner René, Borra Mona Zolfaghari, Pavlov Ihor, Bek Alpan, Turan Raşit, Kesim Denizhan Koray, Tozburun Serhat, Ilday Serim, Ilday F Ömer
Department of Physics, Bilkent University, Ankara, 06800, Turkey.
Department of Electrical and Electronics Engineering, Bilkent University, Ankara, 06800, Turkey.
Nat Photonics. 2017 Oct;11(10):639-645. doi: 10.1038/s41566-017-0004-4. Epub 2017 Sep 29.
Silicon is an excellent material for microelectronics and integrated photonics1-3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, , " microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances.
硅是微电子和集成光子学的优良材料1-3，在中红外光学领域具有尚未开发的潜力4。尽管人们广泛认识到第三维度5,6的重要性，但目前的光刻方法不允许在硅芯片内部直接制造光子器件和功能性微元件。即使是相对简单的弯曲几何形状也无法通过反应离子蚀刻等技术实现。缺乏像玻璃7、电子器件中那样的嵌入式光学元件以及更好的电子-光子集成8。在这里，我们展示了使用1微米大小的点和长度可调的棒状结构作为基本构建块，在硅内部深处基于激光制造复杂的三维结构。激光改性的硅与未改性部分具有不同的光学折射率，这使得能够制造出众多光子器件。这些部件还可以进行化学蚀刻以产生所需的三维形状。我们举例说明了大量用于芯片微流体冷却、通孔、微机电系统、光伏应用和光子器件的地下“微观结构，这些结构与相应的现有技术器件性能相匹配或超越。
