使用硅化钯与原子尺度硅磷器件形成的低电阻、高产量电接触。
Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide.
作者信息
Schmucker Scott W, Namboodiri Pradeep N, Kashid Ranjit, Wang Xiqiao, Hu Binhui, Wyrick Jonathan E, Myers Alline F, Schumacher Joshua D, Silver Richard M, Stewart M D
机构信息
University of Maryland, College Park, Maryland 20742, USA.
National Institute of Standards & Technology, Gaithersburg, Maryland 20899, USA.
出版信息
Phys Rev Appl. 2019;11. doi: 10.1103/PhysRevApplied.11.034071.
Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional -doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the restrictive thermal budget necessary to maintain the integrity of the layer make developing a robust electrical contact method a significant challenge to realizing the potential of atomically precise devices. We demonstrate a method for electrical contact using PdSi formed at the temperature of silicon overgrowth (250 °C), minimizing the diffusive impact on the layer. We use the transfer length method to show our PdSi contacts have very high yield (99.7% +0.2% -1.5%) and low resistivity (272±41Ωm) in contacting mesa-etched Si:P layers. We also present three terminal measurements of low contact resistance (<1 kΩ) to devices written by STM hydrogen depassivation lithography with similarly high yield (100% +0% -3.2%).
扫描隧道显微镜（STM）能够以原子精度在硅中制造二维掺杂结构，其应用涵盖从隧道场效应晶体管到量子比特等领域。非常小的接触面积与维持 层完整性所需的严格热预算相结合，使得开发一种稳健的电接触方法成为实现原子精确器件潜力的重大挑战。我们展示了一种在硅外延生长温度（250°C）下形成PdSi进行电接触的方法，将对 层的扩散影响降至最低。我们使用转移长度法表明，在接触台面蚀刻的Si:P 层时，我们的PdSi接触具有非常高的良品率（99.7% +0.2% -1.5%）和低电阻率（272±41Ωm）。我们还展示了对通过STM氢去钝化光刻写入的器件进行的三端测量，其接触电阻低（<1 kΩ），良品率同样很高（100% +0% -3.2%）。
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