Rigosi Albert F, Marzano Martina, Levy Antonio, Hill Heather M, Patel Dinesh K, Kruskopf Mattias, Jin Hanbyul, Elmquist Randolph E, Newell David B
Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States.
Department of Electronics and Telecommunications, Politecnico di Torino, Torino 10129, Italy.
Physica B Condens Matter. 2020;582. doi: https://doi.org/10.1016/j.physb.2019.411971.
A mathematical approach is introduced for predicting quantized resistances in graphene junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield nonconventional, fractional multiples of the typical quantized Hall resistance at the = 2 plateau ( ≈ 12906 Ω) and take the form: . This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is supported with experimental data from graphene devices with multiple source and drain terminals.
本文介绍了一种数学方法，用于预测石墨烯结器件中的量子化电阻，该器件利用多个电子流入和流出点。根据任意数量端子的配置，电学测量在ν = 2平台（R ≈ 12906 Ω）处产生非传统的典型量子化霍尔电阻的分数倍数，其形式为： 。该理论公式与材料无关，预计可应用于其他表现出量子霍尔行为的材料系统。此外，该公式得到了具有多个源极和漏极端子的石墨烯器件的实验数据的支持。
