Deuermeier Jonas, Kiazadeh Asal, Klein Andreas, Martins Rodrigo, Fortunato Elvira
i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal.
Department of Materials and Earth Sciences, Technische Universität Darmstadt, Otto-Berndt-Straße 3, D-64287 Darmstadt, Germany.
Nanomaterials (Basel). 2019 Feb 19;9(2):289. doi: 10.3390/nano9020289.
Multi-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide-an unusual property for an oxide semiconductor-are discussed for the first time regarding their role in the resistive switching mechanism.
介绍了一种Cu₂O/Al₂O₃双层器件的多级电阻开关特性。发现制造过程中在氧化铜中诱导产生的氧化态梯度在定义多个电阻状态方面起主导作用。首次讨论了氧化铜的高导电晶界(这是氧化物半导体的一种不寻常特性)在电阻开关机制中的作用。