Jana Debanjan, Samanta Subhranu, Roy Sourav, Lin Yu Feng, Maikap Siddheswar
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 333 Taiwan, ROC.
Nanomicro Lett. 2015;7(4):392-399. doi: 10.1007/s40820-015-0055-3. Epub 2015 Aug 1.
The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrO /TiO /TiN structure for the first time. Transmission electron microscope image confirmed a via-hole size of 0.4 µm. A 3-nm-thick amorphous TiO with 4-nm-thick polycrystalline CrO layer was observed. A small 0.4-µm device shows reversible resistive switching at a current compliance of 300 µA as compared to other larger size devices (1-8 µm) owing to reduction of leakage current through the TiO layer. Good device-to-device uniformity with a yield of >85 % has been clarified by weibull distribution owing to higher slope/shape factor. The switching mechanism is based on oxygen vacancy migration from the CrO layer and filament formation/rupture in the TiO layer. Long read pulse endurance of >10 cycles, good data retention of 6 h, and a program/erase speed of 1 µs pulse width have been obtained.
首次通过减小Cr/CrO /TiO /TiN结构中的器件尺寸，观察了100个随机测量器件的电阻开关记忆特性。透射电子显微镜图像证实通孔尺寸为0.4 µm。观察到具有4 nm厚多晶CrO 层的3 nm厚非晶TiO 。与其他较大尺寸器件（1 - 8 µm）相比，由于通过TiO 层的漏电流减小，一个小的0.4 µm器件在300 µA的电流合规性下显示出可逆电阻开关。由于较高的斜率/形状因子，通过威布尔分布已阐明器件间具有>85%的良率的良好均匀性。开关机制基于氧空位从CrO 层的迁移以及TiO 层中细丝的形成/断裂。已获得>10个循环的长读取脉冲耐久性、6小时的良好数据保持性以及1 µs脉冲宽度的编程/擦除速度。
