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利用电场调节适体石墨烯场效应晶体管上的连接体固定密度

Modulating the Linker Immobilization Density on Aptameric Graphene Field Effect Transistors Using an Electric Field.

作者信息

Hao Zhuang, Pan Yunlu, Huang Cong, Wang Ziran, Lin Qiao, Zhao Xuezeng, Liu Shaoqin

机构信息

Key Laboratory of Micro-systems and Micro-structures Manufacturing, Harbin Institute of Technology, Ministry of Education, Harbin 150080, China.

School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China.

出版信息

ACS Sens. 2020 Aug 28;5(8):2503-2513. doi: 10.1021/acssensors.0c00752. Epub 2020 May 18.

DOI:10.1021/acssensors.0c00752
PMID:32375472
Abstract

Aptameric graphene-based field-effect transistors (A-GFETs) always employ linkers, which could immobilize on graphene through π-π stacking between contained pyrenyl groups and graphene, to anchor aptamers. Aptamer density is closely associated with the A-GFET sensitivity and determined by the linker density. Using known linker immobilization methods, the linker density is random, uncontrollable, and limited. In this work, we propose a novel linker immobilization method which can be used to effectively modulate the linker density using an electric field and further bridge the relationship between the linker density and the A-GFET sensitivity. Here, polar molecule 1-pyrenebutanoic acid succinimidyl ester (PASE) is used as a linker representative. In the electric field, PASE is arranged regularly with the electron-rich pyrenyl group forced toward graphene in the solution due to electrostatic repulsion, thereby making it possible to modulate the quantity of PASE molecules that could interact with graphene by tuning the electric field application and then realizing the regulation of the A-GFET sensitivity. Experimental results indicate that the limits of detection (LODs) of A-GFETs for detecting interleukin-6 (IL-6) and insulin can be significantly improved to be 618 and 766 fM, respectively, by applying an electric field at -0.3 V for 3 h during PASE immobilization.

摘要

基于适配体的石墨烯场效应晶体管(A-GFET)通常采用连接子,这些连接子可通过所含芘基与石墨烯之间的π-π堆积固定在石墨烯上,以锚定适配体。适配体密度与A-GFET的灵敏度密切相关,并由连接子密度决定。使用已知的连接子固定方法时,连接子密度是随机的、不可控的且有限的。在这项工作中,我们提出了一种新型的连接子固定方法,该方法可用于通过电场有效调节连接子密度,并进一步建立连接子密度与A-GFET灵敏度之间的关系。在此,极性分子1-芘丁酸琥珀酰亚胺酯(PASE)用作连接子代表。在电场中,由于静电排斥作用,PASE在溶液中呈规则排列,富含电子的芘基被迫朝向石墨烯,从而通过调节电场施加量来调节可与石墨烯相互作用的PASE分子数量成为可能,进而实现对A-GFET灵敏度的调控。实验结果表明,在PASE固定过程中施加-0.3 V的电场3小时,A-GFET检测白细胞介素-6(IL-6)和胰岛素的检测限(LOD)可分别显著提高至618和766 fM。

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