Bishop Sam G, Hadden John P, Alzahrani Faris D, Hekmati Reza, Huffaker Diana L, Langbein Wolfgang W, Bennett Anthony J
School of Engineering and School of Physics and Astronomy, Cardiff University, Queen's Building, The Parade, Cardiff, CF24 3AA, United Kingdom.
ACS Photonics. 2020 Jul 15;7(7):1636-1641. doi: 10.1021/acsphotonics.0c00528. Epub 2020 Jun 11.
A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep within the band gap of aluminum nitride. Using spectral, polarization, and photon-counting time-resolved measurements we demonstrate bright (>10 counts s), pure ( (0) < 0.2), and polarized room-temperature quantum light emission from color centers in this commercially important semiconductor.
能够产生单光子的器件是许多量子技术的基本构建模块。在固态量子发射工程方面已经取得了重大进展,例如,使用半导体量子点以及体材料和二维材料中的缺陷位点。在此,我们报告在氮化铝带隙深处发现了一种室温量子发射器。通过光谱、偏振和光子计数时间分辨测量,我们证明了这种具有商业重要性的半导体中色心发出的明亮(>10计数/秒)、纯净(偏振度<0.2)且偏振的室温量子光。