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用于逻辑电路的垂直有机渗透双基极晶体管。

Vertical organic permeable dual-base transistors for logic circuits.

作者信息

Guo Erjuan, Wu Zhongbin, Darbandy Ghader, Xing Shen, Wang Shu-Jen, Tahn Alexander, Göbel Michael, Kloes Alexander, Leo Karl, Kleemann Hans

机构信息

Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany.

Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 710072, Xi'an, China.

出版信息

Nat Commun. 2020 Sep 18;11(1):4725. doi: 10.1038/s41467-020-18576-5.

Abstract

The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of <2.0 V. We believe that this work offers a compact and technologically simple hardware platform with excellent application potential for vertical-channel organic transistors in complex logic circuits.

摘要

具有双栅极/基极的有机晶体管的主要优点是阈值电压可以根据施加的第二栅极/基极偏置来设置,这对于逻辑门和集成电路中的应用至关重要。然而,将双栅极/基极结构纳入超短沟道垂直架构是一项重大挑战。在此,我们实现了一种垂直有机可渗透双基极晶体管的器件概念,其中双基极电极可用于调节阈值电压并改变导通电流。通过校准的TCAD模拟研究了详细的工作机制。最后,展示了功率高效的逻辑电路,例如反相器、与非/与计算功能,单个器件在<2.0 V的电源电压下运行。我们相信这项工作为复杂逻辑电路中的垂直沟道有机晶体管提供了一个紧凑且技术简单的硬件平台,具有出色的应用潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/793c/7501854/2066aec65c90/41467_2020_18576_Fig1_HTML.jpg

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