Chen Xingxing, Marks Adam, Paulsen Bryan D, Wu Ruiheng, Rashid Reem B, Chen Hu, Alsufyani Maryam, Rivnay Jonathan, McCulloch Iain
Department of Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
Department of Chemistry and Centre for Plastic Electronics, Imperial College London, London, W12 0BZ, UK.
Angew Chem Int Ed Engl. 2021 Apr 19;60(17):9368-9373. doi: 10.1002/anie.202013998. Epub 2021 Mar 12.
N-type conjugated polymers as the semiconducting component of organic electrochemical transistors (OECTs) are still undeveloped with respect to their p-type counterparts. Herein, we report two rigid n-type conjugated polymers bearing oligo(ethylene glycol) (OEG) side chains, PgNaN and PgNgN, which demonstrated an essentially torsion-free π-conjugated backbone. The planarity and electron-deficient rigid structures enable the resulting polymers to achieve high electron mobility in an OECT device of up to the 10 cm V s range, with a deep-lying LUMO energy level lower than -4.0 eV. Prominently, the polymers exhibited a high device performance with a maximum dimensionally normalized transconductance of 0.212 S cm and the product of charge-carrier mobility μ and volumetric capacitance C* of 0.662±0.113 F cm V s , which are among the highest in n-type conjugated polymers reported to date. Moreover, the polymers are synthesized via a metal-free aldol-condensation polymerization, which is beneficial to their application in bioelectronics.
作为有机电化学晶体管(OECT)半导体组件的N型共轭聚合物相对于其P型对应物仍未得到充分发展。在此,我们报道了两种带有低聚乙二醇(OEG)侧链的刚性N型共轭聚合物PgNaN和PgNgN,它们展示出基本无扭转的π共轭主链。平面性和缺电子刚性结构使所得聚合物在OECT器件中实现高达10 cm² V⁻¹ s⁻¹范围的高电子迁移率,其低 lying LUMO能级低于 -4.0 eV。突出的是,这些聚合物表现出高器件性能,最大尺寸归一化跨导为0.212 S cm⁻¹,电荷载流子迁移率μ与体积电容C*的乘积为0.662±0.113 F cm⁻³ V⁻¹ s⁻¹,这是迄今为止报道的N型共轭聚合物中最高的之一。此外,这些聚合物通过无金属的羟醛缩合聚合反应合成,这有利于它们在生物电子学中的应用。