Ma Hai-Yang, Hu Mengli, Li Nana, Liu Jianpeng, Yao Wang, Jia Jin-Feng, Liu Junwei
Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China.
Department of Physics, The Hong Kong University of Science and Technology, Hong Kong, China.
Nat Commun. 2021 May 14;12(1):2846. doi: 10.1038/s41467-021-23127-7.
We propose a new type of spin-valley locking (SVL), named C-paired SVL, in antiferromagnetic systems, which directly connects the spin/valley space with the real space, and hence enables both static and dynamical controls of spin and valley to realize a multifunctional antiferromagnetic material. The new emergent quantum degree of freedom in the C-paired SVL is comprised of spin-polarized valleys related by a crystal symmetry instead of the time-reversal symmetry. Thus, both spin and valley can be accessed by simply breaking the corresponding crystal symmetry. Typically, one can use a strain field to induce a large net valley polarization/magnetization and use a charge current to generate a large noncollinear spin current. We predict the realization of the C-paired SVL in monolayer VSeO, which indeed exhibits giant piezomagnetism and can generate a large transverse spin current. Our findings provide unprecedented opportunities to integrate various controls of spin and valley with nonvolatile information storage in a single material, which is highly desirable for versatile fundamental research and device applications.
我们提出了一种新型的自旋-谷锁定(SVL),称为C配对SVL,存在于反铁磁系统中,它直接将自旋/谷空间与实空间相连,从而能够对自旋和谷进行静态和动态控制,以实现多功能反铁磁材料。C配对SVL中出现的新的量子自由度由通过晶体对称性而非时间反演对称性相关的自旋极化谷组成。因此,只需打破相应的晶体对称性,就可以同时获取自旋和谷。具体而言,可以使用应变场来诱导大的净谷极化/磁化,并使用电荷电流来产生大的非共线自旋电流。我们预测在单层VSeO中可实现C配对SVL,它确实表现出巨大的压磁效应,并能产生大的横向自旋电流。我们的发现为在单一材料中将自旋和谷的各种控制与非易失性信息存储相结合提供了前所未有的机会,这对于广泛的基础研究和器件应用而言是非常可取的。