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利用电场建模技术鉴定与工作记忆改善相关的前额叶皮质脑区:一种新的元分析方法。

Identifying regions in prefrontal cortex related to working memory improvement: A novel meta-analytic method using electric field modeling.

机构信息

Department of Biomedical Engineering, University of Minnesota, Minneapolis, MN, United States.

Department of Biomedical Engineering, University of Minnesota, Minneapolis, MN, United States.

出版信息

Neurosci Biobehav Rev. 2021 Nov;130:147-161. doi: 10.1016/j.neubiorev.2021.08.017. Epub 2021 Aug 18.

Abstract

Altering cortical activity using transcranial direct current stimulation (tDCS) has been shown to improve working memory (WM) performance. Due to large inter-experimental variability in the tDCS montage configuration and strength of induced electric fields, results have been mixed. Here, we present a novel meta-analytic method relating behavioral effect sizes to electric field strength to identify brain regions underlying largest tDCS-induced WM improvement. Simulations on 69 studies targeting left prefrontal cortex showed that tDCS electric field strength in lower dorsolateral prefrontal cortex (Brodmann area 45/47) relates most strongly to improved WM performance. This region explained 7.8 % of variance, equaling a medium effect. A similar region was identified when correlating WM performance and electric field strength of right prefrontal tDCS studies (n = 18). Maximum electric field strength of five previously used tDCS configurations were outside of this location. We thus propose a new tDCS montage which maximizes the tDCS electric field strength in that brain region. Our findings can benefit future tDCS studies that aim to affect WM function.

摘要

经颅直流电刺激(tDCS)改变皮质活动已被证明可以改善工作记忆(WM)表现。由于 tDCS 刺激配置和诱导电场强度的实验间变异性很大,结果参差不齐。在这里,我们提出了一种新的元分析方法,将行为效应大小与电场强度相关联,以确定 tDCS 诱导 WM 改善的最大脑区。针对左前额叶的 69 项研究的模拟表明,较低的背外侧前额叶(Brodmann 区 45/47)的 tDCS 电场强度与 WM 表现的改善最相关。该区域解释了 7.8%的方差,相当于中等效应。当将 WM 表现与右前额叶 tDCS 研究的电场强度相关联时(n = 18),也确定了类似的区域。之前使用的五种 tDCS 配置的最大电场强度都不在这个位置。因此,我们提出了一种新的 tDCS 刺激配置,最大限度地提高了该脑区的 tDCS 电场强度。我们的发现可以使未来旨在影响 WM 功能的 tDCS 研究受益。

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