Department of Biomedical Engineering, University of Minnesota, Minneapolis, MN, United States.
Department of Biomedical Engineering, University of Minnesota, Minneapolis, MN, United States.
Neurosci Biobehav Rev. 2021 Nov;130:147-161. doi: 10.1016/j.neubiorev.2021.08.017. Epub 2021 Aug 18.
Altering cortical activity using transcranial direct current stimulation (tDCS) has been shown to improve working memory (WM) performance. Due to large inter-experimental variability in the tDCS montage configuration and strength of induced electric fields, results have been mixed. Here, we present a novel meta-analytic method relating behavioral effect sizes to electric field strength to identify brain regions underlying largest tDCS-induced WM improvement. Simulations on 69 studies targeting left prefrontal cortex showed that tDCS electric field strength in lower dorsolateral prefrontal cortex (Brodmann area 45/47) relates most strongly to improved WM performance. This region explained 7.8 % of variance, equaling a medium effect. A similar region was identified when correlating WM performance and electric field strength of right prefrontal tDCS studies (n = 18). Maximum electric field strength of five previously used tDCS configurations were outside of this location. We thus propose a new tDCS montage which maximizes the tDCS electric field strength in that brain region. Our findings can benefit future tDCS studies that aim to affect WM function.
经颅直流电刺激(tDCS)改变皮质活动已被证明可以改善工作记忆(WM)表现。由于 tDCS 刺激配置和诱导电场强度的实验间变异性很大,结果参差不齐。在这里,我们提出了一种新的元分析方法,将行为效应大小与电场强度相关联,以确定 tDCS 诱导 WM 改善的最大脑区。针对左前额叶的 69 项研究的模拟表明,较低的背外侧前额叶(Brodmann 区 45/47)的 tDCS 电场强度与 WM 表现的改善最相关。该区域解释了 7.8%的方差,相当于中等效应。当将 WM 表现与右前额叶 tDCS 研究的电场强度相关联时(n = 18),也确定了类似的区域。之前使用的五种 tDCS 配置的最大电场强度都不在这个位置。因此,我们提出了一种新的 tDCS 刺激配置,最大限度地提高了该脑区的 tDCS 电场强度。我们的发现可以使未来旨在影响 WM 功能的 tDCS 研究受益。