氢气退火对碳纳米管场效应晶体管的影响。

The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors.

作者信息

Uchino Takashi, Ayre Greg N, Smith David C, Hutchison John L, de Groot C H, Ashburn Peter

机构信息

Department of Electrical and Electronic Engineering, Tohoku Institute of Technology, Sendai 982-8577, Japan.

School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ, UK.

出版信息

Nanomaterials (Basel). 2021 Sep 23;11(10):2481. doi: 10.3390/nano11102481.

DOI:10.3390/nano11102481

PMID:34684921

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8540963/

Abstract

We have systematically investigated the effects of hydrogen annealing on Ni- and Al-contacted carbon nanotube field-effect transistors (CNTFETs), whose work functions have not been affected by hydrogen annealing. Measured results show that the electronic properties of single-walled carbon nanotubes are modified by hydrogen adsorption. The Ni-contacted CNTFETs, which initially showed metallic behavior, changed their p-FET behavior with a high on-current over 10 µA after hydrogen annealing. The on-current of the as-made p-FETs is much improved after hydrogen annealing. The Al-contacted CNTFETs, which initially showed metallic behavior, showed unipolar p-FET behavior after hydrogen annealing. We analyzed the energy band diagrams of the CNTFETs to explain experimental results, finding that the electron affinity and the bandgap of single-walled carbon nanotubes changed after hydrogen annealing. These results are consistent with previously reported ab initio calculations.

摘要

我们系统地研究了氢气退火对镍和铝接触的碳纳米管场效应晶体管（CNTFET）的影响，其功函数不受氢气退火的影响。测量结果表明，单壁碳纳米管的电子特性因氢吸附而改变。最初表现出金属行为的镍接触CNTFET，在氢气退火后转变为p-FET行为，导通电流超过10 µA且较高。氢气退火后，制成的p-FET的导通电流有了很大改善。最初表现出金属行为的铝接触CNTFET，在氢气退火后表现出单极p-FET行为。我们分析了CNTFET的能带图以解释实验结果，发现氢气退火后单壁碳纳米管的电子亲和能和带隙发生了变化。这些结果与先前报道的从头算计算结果一致。