单晶硅上电沉积硒化镉的优化与表征

Optimization and Characterization of Electrodeposited Cadmium Selenide on Monocrystalline Silicon.

作者信息

Giurlani Walter, Vizza Martina, Leonardi Antonio Alessio, Lo Faro Maria Josè, Irrera Alessia, Innocenti Massimo

机构信息

Dipartimento di Chimica, Università degli Studi di Firenze, Via della Lastruccia 3, 50019 Sesto Fiorentino, Italy.

INSTM, Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali, Via G. Giusti 9, 50121 Firenze, Italy.

出版信息

Nanomaterials (Basel). 2022 Feb 11;12(4):610. doi: 10.3390/nano12040610.

DOI:10.3390/nano12040610

PMID:35214938

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8875289/

Abstract

In this work, the optimal conditions for the electrodeposition of a CdSe film on n-Si were demonstrated. The structural and optical properties of the bare films and after annealing were studied. In particular, the crystallinity and photoluminescence of the samples were evaluated, and after annealing at 400 °C under a nitrogen atmosphere, a PL increase by almost an order of magnitude was observed. This paper opens the route towards the use of electrochemical deposition as a cost-effective and easy fabrication approach that can be used to integrate other interesting materials in the silicon-manufacturing processes for the realization of optoelectronic devices.

摘要

在这项工作中，展示了在n型硅上电沉积CdSe薄膜的最佳条件。研究了裸膜及其退火后的结构和光学性质。特别地，评估了样品的结晶度和光致发光，并且在氮气气氛下于400℃退火后，观察到光致发光增加了近一个数量级。本文开启了将电化学沉积作为一种经济高效且易于制造的方法的途径，该方法可用于在硅制造工艺中集成其他有趣的材料以实现光电器件。