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AlO、MgO和CaF₂的高能重离子辐照

High-Energy Heavy Ion Irradiation of AlO, MgO and CaF.

作者信息

Hanžek Juraj, Dubček Pavo, Fazinić Stjepko, Tomić Luketić Kristina, Karlušić Marko

机构信息

Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia.

出版信息

Materials (Basel). 2022 Mar 13;15(6):2110. doi: 10.3390/ma15062110.

DOI:10.3390/ma15062110
PMID:35329562
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8950228/
Abstract

High-energy heavy ion irradiation can produce permanent damage in the target material if the density of deposited energy surpasses a material-dependent threshold value. It is known that this threshold can be lowered in the vicinity of the surface or in the presence of defects. In the present study, we established threshold values for AlO, MgO and CaF under the above-mentioned conditions, and found those values to be much lower than expected. By means of atomic force microscopy and Rutherford backscattering spectrometry in channelling mode, we present evidence that ion beams with values of 3 MeV O and 5 MeV Si, despite the low density of deposited energy along the ion trajectory, can modify the structure of investigated materials. The obtained results should be relevant for radiation hardness studies because, during high-energy ion irradiation, unexpected damage build-up can occur under similar conditions.

摘要

如果沉积能量密度超过与材料相关的阈值,高能重离子辐照会在靶材料中产生永久性损伤。众所周知,在表面附近或存在缺陷的情况下,该阈值会降低。在本研究中,我们确定了上述条件下AlO、MgO和CaF的阈值,并发现这些值远低于预期。通过原子力显微镜和沟道模式下的卢瑟福背散射光谱,我们提供了证据表明,尽管沿离子轨迹的沉积能量密度较低,但能量为3 MeV的氧离子束和5 MeV的硅离子束仍可改变被研究材料的结构。所得结果对于辐射硬度研究应具有相关性,因为在高能离子辐照期间,在类似条件下可能会出现意外的损伤累积。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19b7/8950228/ff49188f47c3/materials-15-02110-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19b7/8950228/bd4f6adfd3b6/materials-15-02110-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19b7/8950228/ce2070e49e09/materials-15-02110-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19b7/8950228/ff49188f47c3/materials-15-02110-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19b7/8950228/bd4f6adfd3b6/materials-15-02110-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19b7/8950228/ce2070e49e09/materials-15-02110-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/19b7/8950228/ff49188f47c3/materials-15-02110-g003.jpg

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Ion tracks in silicon formed by much lower energy deposition than the track formation threshold.硅中的离子径迹是由比径迹形成阈值低得多的能量沉积形成的。
Sci Rep. 2021 Jan 8;11(1):185. doi: 10.1038/s41598-020-80360-8.
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Shape Deformation in Ion Beam Irradiated Colloidal Monolayers: An AFM Investigation.离子束辐照胶体单层中的形状变形:原子力显微镜研究
Nanomaterials (Basel). 2020 Mar 3;10(3):453. doi: 10.3390/nano10030453.
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Recrystallization as the governing mechanism of ion track formation.重结晶作为离子径迹形成的主导机制。
Sci Rep. 2019 Mar 7;9(1):3837. doi: 10.1038/s41598-019-40239-9.
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Materials (Basel). 2017 Sep 6;10(9):1041. doi: 10.3390/ma10091041.
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Ionization-induced annealing of pre-existing defects in silicon carbide.碳化硅中预先存在缺陷的电离诱导退火
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Sci Rep. 2014 Jul 18;4:5742. doi: 10.1038/srep05742.