Tomić Luketić Kristina, Karlušić Marko, Gajović Andreja, Fazinić Stjepko, O'Connell Jacques H, Pielić Borna, Radatović Borna, Kralj Marko
Ruđer Bošković Institute, Bijenička Cesta 54, 10000 Zagreb, Croatia.
Nelson Mandela University, University Way, Summerstrand, Port Elizabeth 6001, South Africa.
Materials (Basel). 2021 Apr 11;14(8):1904. doi: 10.3390/ma14081904.
Both silicon and graphite are radiation hard materials with respect to swift heavy ions like fission fragments and cosmic rays. Recrystallisation is considered to be the main mechanism of prompt damage anneal in these two materials, resulting in negligible amounts of damage produced, even when exposed to high ion fluences. In this work we present evidence that these two materials could be susceptible to swift heavy ion irradiation effects even at low energies. In the case of silicon, ion channeling and electron microscopy measurements reveal significant recovery of pre-existing defects when exposed to a swift heavy ion beam. In the case of graphite, by using ion channeling, Raman spectroscopy and atomic force microscopy, we found that the surface of the material is more prone to irradiation damage than the bulk.
相对于裂变碎片和宇宙射线等快重离子而言，硅和石墨都是抗辐射材料。再结晶被认为是这两种材料中即时损伤退火的主要机制，即使在受到高离子注量照射时，产生的损伤量也可忽略不计。在这项工作中，我们提供了证据表明，即使在低能量下，这两种材料也可能易受快重离子辐照效应的影响。就硅而言，离子沟道和电子显微镜测量表明，当暴露于快重离子束时，预先存在的缺陷会有显著恢复。就石墨而言，通过使用离子沟道、拉曼光谱和原子力显微镜，我们发现该材料的表面比其整体更容易受到辐照损伤。
